Epitaxial layers grown with HCl addition: A comparison with the standard process

Materials Science Forum

Volumn 527-529, Issue PART 1, 2006, Pages 163-166

  La Via, F ^a   Galvagno, G ^a   Firrincieli, A ^a   Roccaforte, F ^a   Di Franco, S ^a   Ruggiero, A ^b   Barbera, M ^b   Reitano, R ^b   Musumeci, P ^b   Calcagno, L ^b   Foti, G ^b   Mauceri, M ^c   Leone, S ^c   Pistone, G ^c   Portuese, F ^c   Abbondanza, G ^c   Abagnale, G ^d   Valente, G L ^e   Crippa, D ^e  

^a CNR IMM   (Italy)

^b UNIVERSITY OF CATANIA   (Italy)

^c C o BIC Sicilia Pantano d'Arci   (Italy)

^d STMICROELECTRONICS   (Italy)

^e LPE   (Italy)

Author keywords

HCl; High growth rate; Homoepitaxial growth; Schottky diodes

Indexed keywords

EPITAXIAL LAYERS; GROWTH RATE; HYDROCHLORIC ACID; OPTIMIZATION; SCHOTTKY BARRIER DIODES;

DEPOSITION CHAMBERS; HIGH GROWTH RATE; HOMOEPITAXIAL GROWTH; STRUCTURAL CHARACTERIZATION METHODS;

EPITAXIAL GROWTH;

EID: 33845576358     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/0-87849-425-1.163     Document Type: Conference Paper

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