SCOPUS 정보 검색 플랫폼 - 논문 보기

메뉴 건너뛰기

Characterization of Semiconductor Heterostructures and Nanostructures

Volumn , Issue , 2008, Pages 435-482

ESR of interfaces and nanolayers in semiconductor heterostructures

(2) Stesmans, Andre a Afanas'ev, Valery V a

a KU LEUVEN (Belgium)

Author keywords

dielectric layers; electron spin resonance; hydrogen; interfaces; point defects; semiconductor heterostructures; thermal silica

Indexed keywords

EID: 79951834746 PISSN: None EISSN: None Source Type: Book
DOI: 10.1016/B978-0-444-53099-8.00013-0 Document Type: Chapter

Times cited : (11)

References (195)

1
- 0009366023
- J. Bardeen and W.H. Brattain (1949) Phys. Rev. 75 1208.
- (1949) Phys. Rev. , vol.75 , pp. 1208
- Bardeen, J.¹ Brattain, W.H.²

2
- 33646895034
- J.S. Kilby and E. Keonjian (1959) Tech. Dig. IEDM 5 76.
- (1959) Tech. Dig. IEDM , vol.5 , pp. 76
- Kilby, J.S.¹ Keonjian, E.²

3
- 34548035708
- J.S. Kilby (1976) IEEE Trans. Electron Devices 23 648.
- (1976) IEEE Trans. Electron Devices , vol.23 , pp. 648
- Kilby, J.S.¹

4
- 0016116644
- R.H. Dennard, F.H. Gaenssle, H.N. Yu, et al. (1974) IEEE J. Solid State Circuits 9 256.
- (1974) IEEE J. Solid State Circuits , vol.9 , pp. 256
- Dennard, R.H.¹ Gaenssle, F.H.² Yu, H.N.³

5
- 0000793139
- G. Moore (1965) Electronics 38 114.
- (1965) Electronics , vol.38 , pp. 114
- Moore, G.¹

6
- 84882901462
- Tech. Dig. IEDM 21 11.
- (1975) Tech. Dig. IEDM , vol.21 , pp. 11

7
- 84882911190
- A. Chatterjee, et al. (2004) Tech. Dig. IEDM 657.
- (2004) Tech. Dig. IEDM , pp. 657
- Chatterjee, A.¹

8
- 0008571870
- D.M. Brown and P.V. Gray (1968) J. Electrochem. Soc. 115 760.
- (1968) J. Electrochem. Soc. , vol.115 , pp. 760
- Brown, D.M.¹ Gray, P.V.²

9
- 0021392247
- C.-T. Sah, J.Y.-C. Sun and J.J.-T. Tsou (1984) J. Appl. Phys. 55 1525.
- (1984) J. Appl. Phys. , vol.55 , pp. 1525
- Sah, C.-T.¹ Sun, J.Y.-C.² Tsou, J.J.-T.³

10
- 0020935730
- and references therein, See, e.g
- H. Poindexter and P.J. Caplan (1983) Prog. Surf. Sci. 14 201. and references therein See, e.g
- (1983) Prog. Surf. Sci. , vol.14 , pp. 201
- Poindexter, H.¹ Caplan, P.J.²

11
- 20344388361
- B.E. Deal, M. Sklar, A.S. Grove and E.H. Snow (1967) J. Electrochem. Soc. 1214 266.
- (1967) J. Electrochem. Soc. , vol.1214 , pp. 266
- Deal, B.E.¹ Sklar, M.² Grove, A.S.³ Snow, E.H.⁴

12
- 0000181148
- T.R. Oldham, F.B. McLean, H.E. Boesch Jr and J.M. McGarrity (1989) Semicond. Sci. Technol. 4 986.
- (1989) Semicond. Sci. Technol. , vol.4 , pp. 986
- Oldham, T.R.¹ McLean, F.B.² Boesch, H.E.³ McGarrity, J.M.⁴

13
- 0021427238
- P.M. Lenahan and P.V. Dressendorfer (1984) J. Appl. Phys. 55 3495.
- (1984) J. Appl. Phys. , vol.55 , pp. 3495
- Lenahan, P.M.¹ Dressendorfer, P.V.²

14
- 84938437671
- B.E. Deal (1974) J. Electrochem. Soc. 121 198C.
- (1974) J. Electrochem. Soc. , vol.121 , pp. 198C
- Deal, B.E.¹

15
- 6044256723
- B.E. Deal (1980) J. Electrochem. Soc. 127 979.
- (1980) J. Electrochem. Soc. , vol.127 , pp. 979
- Deal, B.E.¹

16
- 0017456928
- T.W. Hickmott (1977) J. Appl. Phys. 48 723.
- (1977) J. Appl. Phys. , vol.48 , pp. 723
- Hickmott, T.W.¹

17
- 0008536196
- R. Degraeve, G. Groeseneken, R. Bellens, et al. (1998) IEEE Trans. Electron Devices 45 904.
- (1998) IEEE Trans. Electron Devices , vol.45 , pp. 904
- Degraeve, R.¹ Groeseneken, G.² Bellens, R.³

18
- 0001266208
- A. Stesmans and V.V. Afanas'ev (1996) Appl. Phys. Lett. 69 2056.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 2056
- Stesmans, A.¹ Afanas'ev, V.V.²

19
- 84882921734
- G.J. Gerardi, E.H. Poindexter, P.J. Caplan and N.M. Johnson (1986) Appl. Phys. Lett. 49 384.
- (1986) Appl. Phys. Lett. , vol.49 , pp. 384
- Gerardi, G.J.¹ Poindexter, E.H.² Caplan, P.J.³ Johnson, N.M.⁴

20
- 0041340533
- D.K. Schroder and J.A. Babcock (2003) J. Appl. Phys. 94 1.
- (2003) J. Appl. Phys. , vol.94 , pp. 1
- Schroder, D.K.¹ Babcock, J.A.²

21
- 0003873587
- New York: Wiley
- W. Gordy (1980) Theory and Applications of Electron Spin Resonance. New York: Wiley
- (1980) Theory and Applications of Electron Spin Resonance
- Gordy, W.¹

22
- 0000206815
- D.R. Uhlmann, N.J. Kreidl (Eds), New York: Academic Press
- D.L. Griscom (1990) D.R. Uhlmann, N.J. Kreidl (Eds) Glass: Science and Technology Vol 4B New York: Academic Press 151.
- (1990) Glass: Science and Technology , vol.4B , pp. 151
- Griscom, D.L.¹

23
- 0037170213
- C.J. Pickard and F. Mauri (2002) Phys. Rev. Lett. 88 086403-086411.
- (2002) Phys. Rev. Lett. , vol.88 , pp. 086403-086411
- Pickard, C.J.¹ Mauri, F.²

24
- 33846401171
- L. Giordano, P.V. Sushko, G. Pacchioni and A.L. Shluger (2007) Phys. Rev. B 75 024109.
- (2007) Phys. Rev. B , vol.75 , pp. 024109
- Giordano, L.¹ Sushko, P.V.² Pacchioni, G.³ Shluger, A.L.⁴

25
- 0003431029
- New York: Wiley
- J.A. Weil, J.R. Bolton and J.E. Wertz (1994) Electron Paramagnetic Resonance. New York: Wiley
- (1994) Electron Paramagnetic Resonance
- Weil, J.A.¹ Bolton, J.R.² Wertz, J.E.³

26
- 0004021741
- Oxford: Oxford University Press
- A. Schweiger and G. Jeschke (2001) Principles of Pulsed Electron Paramagnetic Resonance. Oxford: Oxford University Press
- (2001) Principles of Pulsed Electron Paramagnetic Resonance
- Schweiger, A.¹ Jeschke, G.²

27
- 0003572897
- (Eds), Singapore: World Scientific
- G.R. Eaton, S.S. Eaton and K.M. Salikov (Eds) (1998) Foundation of Modern EPR Singapore: World Scientific
- (1998) Foundation of Modern EPR
- Eaton, G.R.¹ Eaton, S.S.² Salikov, K.M.³

28
- 0003803311
- Berlin: Springer-Verlag
- J.-M. Spaeth, R. Niklas and R.H. Batram (1992) Structural Analysis of Point Defects in Solids. Berlin: Springer-Verlag
- (1992) Structural Analysis of Point Defects in Solids
- Spaeth, J.-M.¹ Niklas, R.² Batram, R.H.³

29
- 0347083955
- Berlin: Springer-Verlag
- J.-M. Spaeth, H. Overhof, H.-J. Queisser, et al. (2003) Point Defects in Semiconductor and Insulators. Berlin: Springer-Verlag
- (2003) Point Defects in Semiconductor and Insulators
- Spaeth, J.-M.¹ Overhof, H.² Queisser, H.-J.³

30
- 0003418977
- Berlin: Springer-Verlag
- C.P. Slichter (1990) Principles of Magnetic Resonance. Berlin: Springer-Verlag
- (1990) Principles of Magnetic Resonance
- Slichter, C.P.¹

31
- 19044390824
- A.K. Koh and D.J. Miller (1985) At. Data Nucl. Data Tables 33 235.
- (1985) At. Data Nucl. Data Tables , vol.33 , pp. 235
- Koh, A.K.¹ Miller, D.J.²

32
- 4043159266
- J.R. Morton and K.R. Preston (1978) J. Magn. Res. 30 577.
- (1978) J. Magn. Res. , vol.30 , pp. 577
- Morton, J.R.¹ Preston, K.R.²

33
- 0000763478
- C.G. Van de Walle and P.E. Blöchl (1993) Phys. Rev. B 47 4244.
- (1993) Phys. Rev. B , vol.47 , pp. 4244
- Van de Walle, C.G.¹ Blöchl, P.E.²

34
- 0343049504
- (Eds), 83rd edn, Boca Raton, FL: CRC Press
- D.L. Lide (Eds) (2002) CRC Handbook of Chemistry and Physics 83rd edn Boca Raton, FL: CRC Press 11-50.
- (2002) CRC Handbook of Chemistry and Physics , pp. 11-50
- Lide, D.L.¹

35
- 0001586555
- B.G. Segal, M. Kaplan and G.K. Fraenkel (1965) J. Chem. Phys. 43 4191.
- (1965) J. Chem. Phys. , vol.43 , pp. 4191
- Segal, B.G.¹ Kaplan, M.² Fraenkel, G.K.³

36
- 0018518071
- P.J. Caplan, E.H. Poindexter, B.E. Deal and R.R. Razouk (1979) J. Appl. Phys. 50 5847.
- (1979) J. Appl. Phys. , vol.50 , pp. 5847
- Caplan, P.J.¹ Poindexter, E.H.² Deal, B.E.³ Razouk, R.R.⁴

37
- 0001618693
- R. Helms and E. Poindexter (1994) Rep. Prog. Phys. 57 791.
- (1994) Rep. Prog. Phys. , vol.57 , pp. 791
- Helms, R.¹ Poindexter, E.²

38
- 36749115753
- K.L. Brower (1983) Appl. Phys. Lett. 43 1111.
- (1983) Appl. Phys. Lett. , vol.43 , pp. 1111
- Brower, K.L.¹

39
- 84956264570
- A. Stesmans (1986) Appl. Phys. Lett. 48 972.
- (1986) Appl. Phys. Lett. , vol.48 , pp. 972
- Stesmans, A.¹

40
- 0019529879
- E.H. Poindexter, P. Caplan, B. Deal and R. Razouk (1981) J. Appl. Phys. 52 879.
- (1981) J. Appl. Phys. , vol.52 , pp. 879
- Poindexter, E.H.¹ Caplan, P.² Deal, B.³ Razouk, R.⁴

41
- 0000754322
- A. Stesmans and V.V. Afanas'ev (1998) J. Appl. Phys. 83 2449.
- (1998) J. Appl. Phys. , vol.83 , pp. 2449
- Stesmans, A.¹ Afanas'ev, V.V.²

42
- 0021564913
- J.I. Pankove (Eds), New York: academic, and references therein
- P.C. Taylor (1984) J.I. Pankove (Eds) Hydrogenated Amorphous Silicon, Semiconductors and Semimetals Vol 21C New York: academic 99. and references therein
- (1984) Hydrogenated Amorphous Silicon, Semiconductors and Semimetals Vol 21C , pp. 99
- Taylor, P.C.¹

43
- 33750015285
- A. Stesmans, P. Somers, V.V. Afanas'ev, et al. (2006) Appl. Phys. Lett. 89 152103-152111.
- (2006) Appl. Phys. Lett. , vol.89 , pp. 152103-152111
- Stesmans, A.¹ Somers, P.² Afanas'ev, V.V.³

44
- 0002163867
- S. Geschwind (Eds), New York: Plenum
- R. Orbach and M.J. Stapleton (1972) S. Geschwind (Eds) Electron Spin-Lattice Relaxation in Electron Spin Resonance New York: Plenum
- (1972) Electron Spin-Lattice Relaxation in Electron Spin Resonance
- Orbach, R.¹ Stapleton, M.J.²

45
- 84867564451
- K.L. Brower (1988) Phys. Rev. B 38 9757.
- (1988) Phys. Rev. B , vol.38 , pp. 9757
- Brower, K.L.¹

46
- 0012201403
- M. Stutzmann, M.S. Brandt and M.W. Bayerl (2000) J. Non-Cryst. Solids 266–269 1.
- (2000) J. Non-Cryst. Solids , vol.266-269 , pp. 1
- Stutzmann, M.¹ Brandt, M.S.² Bayerl, M.W.³

47
- 0346539170
- D.J. Lepine (1972) Phys. Rev. B 6 436.
- (1972) Phys. Rev. B , vol.6 , pp. 436
- Lepine, D.J.¹

48
- 0017930413
- D. Kaplan, I. Solomon and N.F. Mott (1978) J. Phys. Lett. 39 L51.
- (1978) J. Phys. Lett. , vol.39 , pp. L51
- Kaplan, D.¹ Solomon, I.² Mott, N.F.³

49
- 0003667691
- B. Henderson, M. Pepper and R.V. Vranch (1989) Semicond. Sci. Technol 4 1045.
- (1989) Semicond. Sci. Technol , vol.4 , pp. 1045
- Henderson, B.¹ Pepper, M.² Vranch, R.V.³

50
- 0001466860
- J.T. Krick, P.M. Lenahan and G.J. Dunn (1991) Appl. Phys. Lett. 59 3437.
- (1991) Appl. Phys. Lett. , vol.59 , pp. 3437
- Krick, J.T.¹ Lenahan, P.M.² Dunn, G.J.³

51
- 34548707965
- IEEE 45th Intern
- J.P. Campbell, P.M. Lenahan, A.T. Krishnan and S. Krishnan (2007) IEEE 45th Intern. Reliability Physics Symp., Phoenix 503.
- (2007) Reliability Physics Symp., Phoenix , pp. 503
- Campbell, J.P.¹ Lenahan, P.M.² Krishnan, A.T.³ Krishnan, S.⁴

52
- 21544438257
- B. Stich, S. Greulich-Weber and J.-M. Spaeth (1995) J. Appl. Phys. 77 1546.
- (1995) J. Appl. Phys. , vol.77 , pp. 1546
- Stich, B.¹ Greulich-Weber, S.² Spaeth, J.-M.³

53
- 84882887235
- E. Gusev (Eds), Dordrecht: Springer
- M. Fanciulli, O. Costa, S. Baldovino, et al. (2006) E. Gusev (Eds) Defects in High-κGate Dielectric Stacks Dordrecht: Springer 263.
- (2006) Defects in High-κGate Dielectric Stacks , pp. 263
- Fanciulli, M.¹ Costa, O.² Baldovino, S.³

54
- 0000716166
- M.S. Brandt, R. Neuberger and M. Stutzmann (2000) Appl. Phys. Lett 76 1467.
- (2000) Appl. Phys. Lett , vol.76 , pp. 1467
- Brandt, M.S.¹ Neuberger, R.² Stutzmann, M.³

55
- 11544321991
- A. Stesmans (1996) Appl. Phys. Lett. 68 2076.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2076
- Stesmans, A.¹

56
- 0542363921
- A. Stesmans (1996) Appl. Phys. Lett. 68 2723.
- (1996) Appl. Phys. Lett. , vol.68 , pp. 2723
- Stesmans, A.¹

57
- 0346840948
- D.L. Griscom (1985) J. Appl. Phys. 58 2524.
- (1985) J. Appl. Phys. , vol.58 , pp. 2524
- Griscom, D.L.¹

58
- 0000042475
- A.H. Edwards (1995) J. Non-Cryst. Solids 187 232.
- (1995) J. Non-Cryst. Solids , vol.187 , pp. 232
- Edwards, A.H.¹

59
- 0028764509
- A. Stesmans (1994) J. Non-Cryst. Solids 179 10.
- (1994) J. Non-Cryst. Solids , vol.179 , pp. 10
- Stesmans, A.¹

60
- 0000119442
- A. Stesmans and V.V. Afanas'ev (1998) Phys. Rev. B 57 10030.
- (1998) Phys. Rev. B , vol.57 , pp. 10030
- Stesmans, A.¹ Afanas'ev, V.V.²

61
- 0000019521
- A. Stesmans (2000) Phys. Rev. B 61 8393.
- (2000) Phys. Rev. B , vol.61 , pp. 8393
- Stesmans, A.¹

62
- 0001572256
- A. Pusel, U. Wetterauer and P. Hess (1998) Phys. Rev. Lett. 81 645.
- (1998) Phys. Rev. Lett. , vol.81 , pp. 645
- Pusel, A.¹ Wetterauer, U.² Hess, P.³

63
- 84944614096
- Y. Nishi (1971) Jpn. J. Appl. Phys. 10 52.
- (1971) Jpn. J. Appl. Phys. , vol.10 , pp. 52
- Nishi, Y.¹

64
- 84950554121
- Y. Nishi, K. Tanaka and A. Ahwada (1972) Jpn. J. Appl. Phys. 11 85.
- (1972) Jpn. J. Appl. Phys. , vol.11 , pp. 85
- Nishi, Y.¹ Tanaka, K.² Ahwada, A.³

65
- 30844431996
- E.H. Poindexter (1989) Semicond. Sci. Technol. 4 961.
- (1989) Semicond. Sci. Technol. , vol.4 , pp. 961
- Poindexter, E.H.¹

66
- 0001170732
- A. Stesmans (1993) Phys. Rev. B 48 2418.
- (1993) Phys. Rev. B , vol.48 , pp. 2418
- Stesmans, A.¹

67
- 4244054191
- Phys. Rev. Lett. 70 1723.
- (1993) Phys. Rev. Lett. , vol.70 , pp. 1723

68
- 0021519639
- E.H. Poindexter, G.J. Gerardi, M.-E. Rueckel, et al. (1984) J. Appl. Phys. 56 2844.
- (1984) J. Appl. Phys. , vol.56 , pp. 2844
- Poindexter, E.H.¹ Gerardi, G.J.² Rueckel, M.-E.³

69
- 0003365089
- A. Stesmans and V.V. Afanas'ev (1998) J. Phys. Condens. Matter 10 L19.
- (1998) J. Phys. Condens. Matter , vol.10 , pp. L19
- Stesmans, A.¹ Afanas'ev, V.V.²

70
- 0344089060
- P.K. Hurley, A. Stesmans, V.V. Afanas'ev, et al. (2003) J. Appl. Phys. 93 3971.
- (2003) J. Appl. Phys. , vol.93 , pp. 3971
- Hurley, P.K.¹ Stesmans, A.² Afanas'ev, V.V.³

71
- 0001550526
- A. Stesmans, B. Nouwen and V. Afanas'ev (1998) Phys. Rev. B 58 15801.
- (1998) Phys. Rev. B , vol.58 , pp. 15801
- Stesmans, A.¹ Nouwen, B.² Afanas'ev, V.³

72
- 0034714677
- A. Stirling, A. Pasquarello, J.-C. Charlier and R. Car (2000) Phys. Rev. Lett 85 2773.
- (2000) Phys. Rev. Lett , vol.85 , pp. 2773
- Stirling, A.¹ Pasquarello, A.² Charlier, J.-C.³ Car, R.⁴

73
- 85148409565
- C.R. Helms, B.E. Deal (Eds), New York: Plenum
- E.H. Poindexter, P.J. Caplan and G.J. Gerardi (1988) C.R. Helms, B.E. Deal (Eds) Physics and Chemistry of SiO2 and the Si/SiO2 Interface New York: Plenum 279.
- (1988) Physics and Chemistry of SiO2 and the Si/SiO2 Interface , pp. 279
- Poindexter, E.H.¹ Caplan, P.J.² Gerardi, G.J.³

74
- 84882918012
- International Workshop on Gate Insulator
- S. Ohmi, F. Fujita, H.S. Momose (Eds), Tokyo, 2001
- W. Futako, M. Nishikawa, T. Yasusa, et al. (2001) International Workshop on Gate Insulator. S. Ohmi, F. Fujita, H.S. Momose (Eds) Jap. Soc. of Appl. Phys. 130. Tokyo, 2001
- (2001) Jap. Soc. of Appl. Phys. , pp. 130
- Futako, W.¹ Nishikawa, M.² Yasusa, T.³

75
- 2142643724
- W. Futako, N. Mizuochi and S. Yamasaki (2004) Phys. Rev. Lett. 92 105505-105511.
- (2004) Phys. Rev. Lett. , vol.92 , pp. 105505-105511
- Futako, W.¹ Mizuochi, N.² Yamasaki, S.³

76
- 11744293896
- K.L. Brower (1990) Phys. Rev. B 42 3444.
- (1990) Phys. Rev. B , vol.42 , pp. 3444
- Brower, K.L.¹

77
- 0001291950
- A. Stesmans (2000) J. Appl. Phys. 88 489.
- (2000) J. Appl. Phys. , vol.88 , pp. 489
- Stesmans, A.¹

78
- 0036679246
- A. Stesmans (2002) J. Appl. Phys. 92 1317.
- (2002) J. Appl. Phys. , vol.92 , pp. 1317
- Stesmans, A.¹

79
- 0000303921
- A. Stesmans and V.V. Afanas'ev (1996) Phys. Rev. B 54 R11129.
- (1996) Phys. Rev. B , vol.54 , pp. R11129
- Stesmans, A.¹ Afanas'ev, V.V.²

80
- 0001337609
- A. Stesmans and V.V. Afanas'ev (1998) Appl. Phys. Lett. 72 2271.
- (1998) Appl. Phys. Lett. , vol.72 , pp. 2271
- Stesmans, A.¹ Afanas'ev, V.V.²

81
- 0039436914
- M.L. Green, E.P. Gusev, R. Degraeve and E. Garfunkel (2001) J. Appl. Phys. 90 2057.
- (2001) J. Appl. Phys. , vol.90 , pp. 2057
- Green, M.L.¹ Gusev, E.P.² Degraeve, R.³ Garfunkel, E.⁴

82
- 0031150209
- D.A. Buchanan and S.H. Lo (1997) Microelectron. Eng. 36 13.
- (1997) Microelectron. Eng. , vol.36 , pp. 13
- Buchanan, D.A.¹ Lo, S.H.²

83
- 0035872897
- G.D. Wilk, R.M. Wallace and J.M. Anthony (2001) J. Appl. Phys. 89 5243.
- (2001) J. Appl. Phys. , vol.89 , pp. 5243
- Wilk, G.D.¹ Wallace, R.M.² Anthony, J.M.³

84
- 3042715207
- M. Houssa (Eds), Bristol: Institute of Physics
- M. Houssa and M.M. Heyns (2004) M. Houssa (Eds) High-κ Gate Dielectrics Bristol: Institute of Physics 3.
- (2004) High-κ Gate Dielectrics , pp. 3
- Houssa, M.¹ Heyns, M.M.²

85
- 10844282779
- J. Robertson (2004) Eur. Phys. J. Appl. Phys. 28 265.
- (2004) Eur. Phys. J. Appl. Phys. , vol.28 , pp. 265
- Robertson, J.¹

86
- 31744439912
- (Eds), Berlin: Springer-Verlag
- H.R. Huff and D.C. Gilmer (Eds) (2004) High Dielectric Constant Materials: VLSI MOSFET Applications, Springer Series in Advanced Microelectronics Berlin: Springer-Verlag
- (2004) High Dielectric Constant Materials: VLSI MOSFET Applications, Springer Series in Advanced Microelectronics
- Huff, H.R.¹ Gilmer, D.C.²

87
- 33646891317
- M. Houssa, L. Pantisano, L.-A. Ragnarsson, et al. (2006) Mat. Sci. Eng. R 51 37.
- (2006) Mat. Sci. Eng. R , vol.51 , pp. 37
- Houssa, M.¹ Pantisano, L.² Ragnarsson, L.-A.³

88
- 0000650906
- H. Fukumoto, M. Morita and Y. Osaka (1989) J. Appl. Phys. 65 5210.
- (1989) J. Appl. Phys. , vol.65 , pp. 5210
- Fukumoto, H.¹ Morita, M.² Osaka, Y.³

89
- 0030865462
- S.A. Campbell, D.C. Gilmer, X.C. Wang, et al. (1997) IEEE Trans. Electron Devices 44 104.
- (1997) IEEE Trans. Electron Devices , vol.44 , pp. 104
- Campbell, S.A.¹ Gilmer, D.C.² Wang, X.C.³

90
- 84975415416
- M.T. Duffy and A.G. Revesz (1970) J. Electrochem. Soc. 117 372.
- (1970) J. Electrochem. Soc. , vol.117 , pp. 372
- Duffy, M.T.¹ Revesz, A.G.²

91
- 0003641685
- G. Pacchioni, L. Skuja, D.L. Griscom (Eds), Dordrecht: Kluwer
- E.P. Gusev (2000) G. Pacchioni, L. Skuja, D.L. Griscom (Eds) Defects in SiO2 and Related Dielectrics: Science and Technology, NATO Science Series Dordrecht: Kluwer 557.
- (2000) Defects in SiO2 and Related Dielectrics: Science and Technology, NATO Science Series , pp. 557
- Gusev, E.P.¹

92
- 84861443714
- and references therein
- M.A. Quevedo-Lopez, M. El-Bouanani, B.E. Gnade, et al. (2002) J. Appl. Phys. 92 3540. and references therein
- (2002) J. Appl. Phys. , vol.92 , pp. 3540
- Quevedo-Lopez, M.A.¹ El-Bouanani, M.² Gnade, B.E.³

93
- 0000361018
- H. Lee, L. Kang, R. Nieh, et al. (2000) Appl. Phys. Lett. 76 1926.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1926
- Lee, H.¹ Kang, L.² Nieh, R.³

94
- 79956039125
- M.-H. Cho, Y.S. Roh, C.N. Whang, et al. (2002) Appl. Phys. Lett. 81 472.
- (2002) Appl. Phys. Lett. , vol.81 , pp. 472
- Cho, M.-H.¹ Roh, Y.S.² Whang, C.N.³

95
- 13644271669
- M. Crivelli, S. Alessandri, F. Alberici, et al. (2003) Mat. Res. Soc. Symp. Proc. Vol 745 149.
- (2003) Mat. Res. Soc. Symp. Proc. , vol.745 , pp. 149
- Crivelli, M.¹ Alessandri, S.² Alberici, F.³

96
- 3042848929
- Electrochem. Soc., Pennington
- S. Van Elshocht, M. Caymax, S. De Gendt, et al. (2003) Mat. Res. Soc. Symp. Proc. Vol 745 197. Electrochem. Soc., Pennington
- (2003) Mat. Res. Soc. Symp. Proc. , vol.745 , pp. 197
- Van Elshocht, S.¹ Caymax, M.² De Gendt, S.³

97
- 0242496381
- M. Copel and M.C. Reuter (2003) Appl. Phys. Lett. 83 3398.
- (2003) Appl. Phys. Lett. , vol.83 , pp. 3398
- Copel, M.¹ Reuter, M.C.²

98
- 3042776948
- G.D. Wilk and R.M. Wallace (2000) Appl. Phys. Lett. 76 11.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 11
- Wilk, G.D.¹ Wallace, R.M.²

99
- 0000361018
- H. Lee, L. Kang, R. Nieh, et al. (2000) Appl. Phys. Lett. 76 1926.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 1926
- Lee, H.¹ Kang, L.² Nieh, R.³

100
- 79955986464
- M. Gutowski, J.E. Jaffe, C.-L. Liu, et al. (2002) Appl. Phys. Lett. 80 1897.
- (2002) Appl. Phys. Lett. , vol.80 , pp. 1897
- Gutowski, M.¹ Jaffe, J.E.² Liu, C.-L.³

101
- 79956056584
- M.R. Visokay, J.J. Chambers, A.L. Rotondaro, et al. (2002) Appl. Phys. Lett. 80 3183.
- (2002) Appl. Phys. Lett. , vol.80 , pp. 3183
- Visokay, M.R.¹ Chambers, J.J.² Rotondaro, A.L.³

102
- 13644279898
- International Workshop on Gate Insulators
- S. Ohmi, F. Fujita, H.S. Momose (Eds), Tokyo
- Y. Morisaki, Y. Sugita, K. Irino and T. Aoyama (2001) International Workshop on Gate Insulators. S. Ohmi, F. Fujita, H.S. Momose (Eds) Jap. Soc. of Appl. Phys. 184. Tokyo
- (2001) Jap. Soc. of Appl. Phys. , pp. 184
- Morisaki, Y.¹ Sugita, Y.² Irino, K.³ Aoyama, T.⁴

103
- 79956051787
- V.V. Afanas'ev, A. Stesmans, F. Chen, et al. (2002) Appl. Phys. Lett. 81 1053.
- (2002) Appl. Phys. Lett. , vol.81 , pp. 1053
- Afanas'ev, V.V.¹ Stesmans, A.² Chen, F.³

104
- 0034180055
- J.P. Senateur, C. Dubourdieu, F. Weiss, et al. (2000) Adv. Mater. Opt. Electron. 10 155.
- (2000) Adv. Mater. Opt. Electron. , vol.10 , pp. 155
- Senateur, J.P.¹ Dubourdieu, C.² Weiss, F.³

105
- 0036649104
- J. Lettieri, J.H. Haeni and D.G. Schlom (2002) J. Vac. Sci. Technol. A 20 1332.
- (2002) J. Vac. Sci. Technol. A , vol.20 , pp. 1332
- Lettieri, J.¹ Haeni, J.H.² Schlom, D.G.³

106
- 0000125857
- S.C. Choi, M.H. Cho, S.W. Whanbo, et al. (1997) Appl. Phys. Lett. 71 903.
- (1997) Appl. Phys. Lett. , vol.71 , pp. 903
- Choi, S.C.¹ Cho, M.H.² Whanbo, S.W.³

107
- 4244101024
- R.A. McKee, F.J. Walker and M.F. Chisholm (1998) Phys. Rev. Lett. 81 3014.
- (1998) Phys. Rev. Lett. , vol.81 , pp. 3014
- McKee, R.A.¹ Walker, F.J.² Chisholm, M.F.³

108
- 0035394782
- Microelectron
- H.J. Osten, J.P. Liu, H.-J. Müssig and P. Zaumseil (2001) Microelectron. Reliability 41 991.
- (2001) Reliability , vol.41 , pp. 991
- Osten, H.J.¹ Liu, J.P.² Müssig, H.-J.³ Zaumseil, P.⁴

109
- 0035498635
- E.G. Gusev, E. Cartier, D.A. Buchanan, et al. (2001) Microelectron. Eng. 59 341.
- (2001) Microelectron. Eng. , vol.59 , pp. 341
- Gusev, E.G.¹ Cartier, E.² Buchanan, D.A.³

110
- 0001716170
- M. Houssa, A. Stesmans, M. Naili and M.M. Heyns (2000) Appl. Phys. Lett. 77 1381.
- (2000) Appl. Phys. Lett. , vol.77 , pp. 1381
- Houssa, M.¹ Stesmans, A.² Naili, M.³ Heyns, M.M.⁴

111
- 0035886031
- J.R. Chavez, R.A.B. Devine and L. Koltunski (2001) J. Appl. Phys. 90 4284.
- (2001) J. Appl. Phys. , vol.90 , pp. 4284
- Chavez, J.R.¹ Devine, R.A.B.² Koltunski, L.³

112
- 79955984697
- V.V. Afanas'ev and A. Stesmans (2002) Appl. Phys. Lett. 80 1261.
- (2002) Appl. Phys. Lett. , vol.80 , pp. 1261
- Afanas'ev, V.V.¹ Stesmans, A.²

113
- 0035898325
- A. Stesmans and V.V. Afanas'ev (2001) J. Phys.: Condens. Matter 13 L673.
- (2001) J. Phys.: Condens. Matter , vol.13 , pp. L673
- Stesmans, A.¹ Afanas'ev, V.V.²

114
- 79955990439
- A. Stesmans and V.V. Afanas'ev (2002) Appl. Phys. Lett. 80 1957.
- (2002) Appl. Phys. Lett. , vol.80 , pp. 1957
- Stesmans, A.¹ Afanas'ev, V.V.²

115
- 0036567723
- J.L. Cantin and H.J. von Bardeleben (2002) J. Non-Cryst. Solids 303 175.
- (2002) J. Non-Cryst. Solids , vol.303 , pp. 175
- Cantin, J.L.¹ von Bardeleben, H.J.²

116
- 0038690243
- S. Baldovino, S. Nokrin, G. Scarel, et al. (2003) J. Non-Cryst. Solids 322 168.
- (2003) J. Non-Cryst. Solids , vol.322 , pp. 168
- Baldovino, S.¹ Nokrin, S.² Scarel, G.³

117
- 19944420155
- J. Jones and R.C. Barklie (2005) Microelectron. Eng. 80 74.
- (2005) Microelectron. Eng. , vol.80 , pp. 74
- Jones, J.¹ Barklie, R.C.²

118
- 0037828884
- A. Stesmans and V.V. Afanas'ev (2003) Appl. Phys. Lett. 82 4074.
- (2003) Appl. Phys. Lett. , vol.82 , pp. 4074
- Stesmans, A.¹ Afanas'ev, V.V.²

119
- 79958200231
- Y. Kang, P.M. Lenahan, J.F. Conley Jr and R. Solanski (2002) Appl. Phys. Lett. 81 1128.
- (2002) Appl. Phys. Lett. , vol.81 , pp. 1128
- Kang, Y.¹ Lenahan, P.M.² Conley, J.F.³ Solanski, R.⁴

120
- 0242496382
- Y. Kang, P.M. Lenahan and J.F. Conley Jr (2003) Appl. Phys. Lett. 83 3407.
- (2003) Appl. Phys. Lett. , vol.83 , pp. 3407
- Kang, Y.¹ Lenahan, P.M.² Conley, J.F.³

121
- 3042701438
- A. Stesmans, V. Afanas'ev, F. Chen and S.A. Campbell (2004) Appl. Phys. Lett. 84 4574.
- (2004) Appl. Phys. Lett. , vol.84 , pp. 4574
- Stesmans, A.¹ Afanas'ev, V.² Chen, F.³ Campbell, S.A.⁴

122
- 19944392619
- V. Lowalekar, S. Raghavan and J. Non-Cryst (2005) Solids 351 1559.
- (2005) Solids , vol.351 , pp. 1559
- Lowalekar, V.¹ Raghavan, S.² Non-Cryst, J.³

123
- 9744249425
- A. Stesmans and V.V. Afanas'ev (2004) Appl. Phys. Lett. 85 3792.
- (2004) Appl. Phys. Lett. , vol.85 , pp. 3792
- Stesmans, A.¹ Afanas'ev, V.V.²

124
- 84882927727
- J. Appl. Phys. 97 033510.
- (2004) J. Appl. Phys. , vol.97 , pp. 033510

125
- 77953644294
- E. Gusev (Eds), Dordrecht: Springer
- H.J. von Bardeleben, J.L. Cantin, J.J. Ganem and I. Trimaille (2006) E. Gusev (Eds) Defects in High-κ Gate Dielectric Stacks Dordrecht: Springer 249.
- (2006) Defects in High-κ Gate Dielectric Stacks , pp. 249
- von Bardeleben, H.J.¹ Cantin, J.L.² Ganem, J.J.³ Trimaille, I.⁴

126
- 0000162605
- E.P. Gusev, M. Copel, E. Cartier, et al. (2000) Appl. Phys. Lett. 76 176.
- (2000) Appl. Phys. Lett. , vol.76 , pp. 176
- Gusev, E.P.¹ Copel, M.² Cartier, E.³

127
- 85148411782
- (4471)
- K.L. Brower (1986) Phys. Rev. 33 (4471)
- (1986) Phys. Rev. , vol.33
- Brower, K.L.¹

128
- 0032614424
- G. Lucovsky, Y. Wu, N. Niimi, et al. (1999) App. Phys. Lett. 74 2005.
- (1999) App. Phys. Lett. , vol.74 , pp. 2005
- Lucovsky, G.¹ Wu, Y.² Niimi, N.³

129
- 0035127986
- M. Houssa, N. Naili, C. Zhao, et al. (2001) Semicond. Sci. Technol. 16 31.
- (2001) Semicond. Sci. Technol. , vol.16 , pp. 31
- Houssa, M.¹ Naili, N.² Zhao, C.³

130
- 19944412496
- A.J. Craven, M. Mac Kenzie, D.W. McComb and F.T. Docherty (2005) Microelectron. Eng. 80 90.
- (2005) Microelectron. Eng. , vol.80 , pp. 90
- Craven, A.J.¹ Mac Kenzie, M.² McComb, D.W.³ Docherty, F.T.⁴

131
- 85148394676
- Soc.
- Vol. 745(Electrochem., Soc., Pennington
- B. Crivelli M. Alessandri S. Alberici et al., Mat. Res. Soc. Symp. Proc. Vol. 745(Electrochem. Soc., Pennington, 2003) 149.
- (2003) Symp. Proc. , pp. 149

132
- 0035886031
- J.R. Chavez, R.A.B. Devine and L. Koltunski (2001) J. Appl. Phys. 90 4284.
- (2001) J. Appl. Phys. 90 , pp. 4284
- Chavez, J.R.¹ Devine, R.A.B.² Koltunski, L.³

133
- 79955984697
- V.V. Afanas'ev and A. Stesmans (2002) Appl. Phys. Lett. 80 1261.
- (2002) Appl. Phys. Lett. , vol.80 , pp. 1261
- Afanas'ev, V.V.¹ Stesmans, A.²

134
- 84882909709
- International Workshop on Gate Insulators
- S. Ohmi, F. Fujita, H.S. Momose (Eds), Tokyo
- R.J. Carter, E. Carier, M. Caymax, et al. (2001) International Workshop on Gate Insulators. S. Ohmi, F. Fujita, H.S. Momose (Eds) Jap. Soc. of Appl. Phys. 24. Tokyo
- (2001) Jap. Soc. of Appl. Phys. , pp. 24
- Carter, R.J.¹ Carier, E.² Caymax, M.³

135
- 0037363322
- W. Tsai, R.J. Carter, H. Nohira, et al. (2003) Microelectron. Eng. 65 259.
- (2003) Microelectron. Eng. , vol.65 , pp. 259
- Tsai, W.¹ Carter, R.J.² Nohira, H.³

136
- 0040374471
- 82 (2003) 1197
- B.E. Park and H. Ishiwara (2001) Appl. Phys. Lett. 79 806. 82 (2003) 1197
- (2001) Appl. Phys. Lett. , vol.79 , pp. 806
- Park, B.E.¹ Ishiwara, H.²

137
- 0000378512
- R.A.B. Devine and J. Arndt (1987) Phys. Rev. 35 9376.
- (1987) Phys. Rev. , vol.35 , pp. 9376
- Devine, R.A.B.¹ Arndt, J.²

138
- 0037514402
- A. Stesmans, D. Pierreux, R.J. Jaccodine, et al. (2003) Appl. Phys. Lett. 82 3038.
- (2003) Appl. Phys. Lett. , vol.82 , pp. 3038
- Stesmans, A.¹ Pierreux, D.² Jaccodine, R.J.³

139
- 0037702734
- W.L. Warren, D.M. Fleetwood, M.R. Shaneyfelt, et al. (1993) Appl. Phys. Lett. 63 3330.
- (1993) Appl. Phys. Lett. , vol.63 , pp. 3330
- Warren, W.L.¹ Fleetwood, D.M.² Shaneyfelt, M.R.³

140
- 0000154236
- D. Hervé, J.L. Leray and R.A.B. Devine (1992) J. Appl. Phys. 72 3634.
- (1992) J. Appl. Phys. , vol.72 , pp. 3634
- Hervé, D.¹ Leray, J.L.² Devine, R.A.B.³

141
- 3242704492
- F. Gerson and W. Huber (2003) Electron Spin Resonance Spectroscopy of Organic Radicals, Wiley, Weinheim
- (2003) Electron Spin Resonance Spectroscopy of Organic Radicals, Wiley, Weinheim
- Gerson, F.¹ Huber, W.²

142
- 0035891310
- J. Chadi (2001) Phys. Rev. B 64 195403.
- (2001) Phys. Rev. B , vol.64 , pp. 195403
- Chadi, J.¹

143
- 21544458715
- J. DiMaria, E. Cartier and D. Arnold (1993) J. Appl. Phys. 73 3367.
- (1993) J. Appl. Phys. , vol.73 , pp. 3367
- DiMaria, J.¹ Cartier, E.² Arnold, D.³

144
- 0017690426
- G. Revesz (1977) IEEE. Trans. Nucl. Sci. 24 2102.
- (1977) IEEE. Trans. Nucl. Sci. , vol.24 , pp. 2102
- Revesz, G.¹

145
- 0019242095
- F.B. McLean (1980) IEEE Trans. Nucl. Sci. 27 1651.
- (1980) IEEE Trans. Nucl. Sci. , vol.27 , pp. 1651
- McLean, F.B.¹

146
- 0000395740
- N. Saks and R.W. Rendell (1992) IEEE Trans. Nucl. Sci. 39 2220.
- (1992) IEEE Trans. Nucl. Sci. , vol.39 , pp. 2220
- Saks, N.¹ Rendell, R.W.²

147
- 36449002145
- V.V. Afanas'ev, J.M.M. de Nijs and P. Balk (1995) Appl. Phys. Lett. 66 1738.
- (1995) Appl. Phys. Lett. , vol.66 , pp. 1738
- Afanas'ev, V.V.¹ de Nijs, J.M.M.² Balk, P.³

148
- 0036838891
- A. Rivera, A. van Veen, H. Shut, et al. (2002) Solid State Electron. 46 1775.
- (2002) Solid State Electron. , vol.46 , pp. 1775
- Rivera, A.¹ van Veen, A.² Shut, H.³

149
- 0001426308
- J.H. Stathis and E. Cartier (1994) Phys. Rev. Lett. 72 2745.
- (1994) Phys. Rev. Lett. , vol.72 , pp. 2745
- Stathis, J.H.¹ Cartier, E.²

150
- 0000902830
- E. Cartier and J.H. Stathis (1996) Appl. Phys. Lett. 69 103.
- (1996) Appl. Phys. Lett. , vol.69 , pp. 103
- Cartier, E.¹ Stathis, J.H.²

151
- 0030676540
- G. Lucovsky, H.Y. Yang, Z. Jing and J.L. Witten (1997) Phys. Stat. Sol. (a) 159 5.
- (1997) Phys. Stat. Sol. (a) , vol.159 , pp. 5
- Lucovsky, G.¹ Yang, H.Y.² Jing, Z.³ Witten, J.L.⁴

152
- 0000353360
- J.I. Pankove, D.E. Carlson, J.E. Berkeyheiser and R.O. Wance (1983) Phys. Rev. Lett. 51 2224.
- (1983) Phys. Rev. Lett. , vol.51 , pp. 2224
- Pankove, J.I.¹ Carlson, D.E.² Berkeyheiser, J.E.³ Wance, R.O.⁴

153
- 0345186635
- K. Murakami, H. Suhara, A. Fujita and K. Masuda (1991) Phys. Rev. B 44 3409.
- (1991) Phys. Rev. B , vol.44 , pp. 3409
- Murakami, K.¹ Suhara, H.² Fujita, A.³ Masuda, K.⁴

154
- 0026142322
- R.A. Street (1991) Physica B 170 69.
- (1991) Physica B , vol.170 , pp. 69
- Street, R.A.¹

155
- 0012561304
- W.L. Warren, J.R. Schwank, M.R. Shaneyfelt, et al. (1993) Appl. Phys. Lett. 62 1661.
- (1993) Appl. Phys. Lett. , vol.62 , pp. 1661
- Warren, W.L.¹ Schwank, J.R.² Shaneyfelt, M.R.³

156
- 33644751209
- J.L. Cantin, H.J. von Bardeleben, Y. Ke, et al. (2006) Appl. Phys. Lett. 88 092108.
- (2006) Appl. Phys. Lett. , vol.88 , pp. 092108
- Cantin, J.L.¹ von Bardeleben, H.J.² Ke, Y.³

157
- 4344569211
- B.J. O'Sullivan, P.K. Hurley, E. O'Connor, et al. (2004) J. Electrochem. Soc. 151 G493.
- (2004) J. Electrochem. Soc. , vol.151 , pp. G493
- O'Sullivan, B.J.¹ Hurley, P.K.² O'Connor, E.³

158
- 0017525888
- J.E. Shelby (1977) J. Appl. Phys. 48 3387.
- (1977) J. Appl. Phys. , vol.48 , pp. 3387
- Shelby, J.E.¹

159
- 0001346739
- A.H. Edwards (1991) Phys. Rev. B 44 1832.
- (1991) Phys. Rev. B , vol.44 , pp. 1832
- Edwards, A.H.¹

160
- 3042541331
- L.F. Edge, D.G. Schlom, R.T. Brewer, et al. (2004) Appl. Phys. Lett. 84 4629.
- (2004) Appl. Phys. Lett. , vol.84 , pp. 4629
- Edge, L.F.¹ Schlom, D.G.² Brewer, R.T.³

161
- 33748757943
- A. Stesmans, K. Clémer, V.V. Afanas'ev, et al. (2006) Appl. Phys. Lett. 89 112121.
- (2006) Appl. Phys. Lett. , vol.89 , pp. 112121
- Stesmans, A.¹ Clémer, K.² Afanas'ev, V.V.³

162
- 0036538982
- W. Futako, T. Umeda, M. Nishizawa, et al. (2002) J. Non-Cryst. Solids 299–302 575.
- (2002) J. Non-Cryst. Solids , vol.299-302 , pp. 575
- Futako, W.¹ Umeda, T.² Nishizawa, M.³

163
- 0032615487
- A. Mihalyi, R.J. Jaccodine and T.J. Delph (1999) Appl. Phys. Lett. 74 1981.
- (1999) Appl. Phys. Lett. , vol.74 , pp. 1981
- Mihalyi, A.¹ Jaccodine, R.J.² Delph, T.J.³

164
- 0037514402
- A. Stesmans, D. Pierreux, R.J. Jaccodine, et al. (2003) Appl. Phys. Lett. 82 3038.
- (2003) Appl. Phys. Lett. , vol.82 , pp. 3038
- Stesmans, A.¹ Pierreux, D.² Jaccodine, R.J.³

165
- 0001553830
- J.T. Fitch, C.H. Bjorkman, G. Lucovsky, et al. (1989) J. Vac. Sci. Technol. B 7 775.
- (1989) J. Vac. Sci. Technol. B , vol.7 , pp. 775
- Fitch, J.T.¹ Bjorkman, C.H.² Lucovsky, G.³

166
- 0028758513
- New York: IEEE
- J. Welser, J.L. Hoyt, S. Takagi and J.F. Gibbons (1994) International Electron Device Meeting Digest 1994. New York: IEEE 373.
- (1994) International Electron Device Meeting Digest 1994 , pp. 373
- Welser, J.¹ Hoyt, J.L.² Takagi, S.³ Gibbons, J.F.⁴

167
- 18644382452
- C.W. Leitz, M.T. Curie, M.L. Lee, et al. (2002) J. Appl. Phys. 92 3745.
- (2002) J. Appl. Phys. , vol.92 , pp. 3745
- Leitz, C.W.¹ Curie, M.T.² Lee, M.L.³

168
- 33646076449
- E. Simoen, G. Eneman, P. Verheyen, et al. (2006) IEEE Trans. Electron Devices 53 1039.
- (2006) IEEE Trans. Electron Devices , vol.53 , pp. 1039
- Simoen, E.¹ Eneman, G.² Verheyen, P.³

169
- 0000412893
- Y.C. Cheng (1977) Prog. Surf. Sci. 8 181.
- (1977) Prog. Surf. Sci. , vol.8 , pp. 181
- Cheng, Y.C.¹

170
- 0001035776
- V.V. Afanas'ev and A. Stesmans (1998) Phys. Rev. Lett. 80 5176.
- (1998) Phys. Rev. Lett. , vol.80 , pp. 5176
- Afanas'ev, V.V.¹ Stesmans, A.²

171
- 0004032396
- Singapore: World Scientific
- C.T. Sah (1991) Fundamentals of Solid State Electronics. Singapore: World Scientific
- (1991) Fundamentals of Solid State Electronics
- Sah, C.T.¹

172
- 84882853497
- D.M. Fleetwood, P.S. Winokur, J. Reber and T.L. Meisenheimer (1993) J. Appl. Phys. 73 10.
- (1993) J. Appl. Phys. , vol.73 , pp. 10
- Fleetwood, D.M.¹ Winokur, P.S.² Reber, J.³ Meisenheimer, T.L.⁴

173
- 0012717733
- D.J. DiMaria, D.A. Buchanan, J.H. Stathis and R. Stahlbush (1995) J. Appl. Phys. 77 2032.
- (1995) J. Appl. Phys. , vol.77 , pp. 2032
- DiMaria, D.J.¹ Buchanan, D.A.² Stathis, J.H.³ Stahlbush, R.⁴

174
- 45849147729
- D. Bauza, S. Bayon and O. Ghobar (2007) ECS Transactions 6 3.
- (2007) ECS Transactions , vol.6 , pp. 3
- Bauza, D.¹ Bayon, S.² Ghobar, O.³

175
- 36549096569
- Y.Y. Kim and P.M. Lenahan (1988) J. Appl. Phys. 64 3551.
- (1988) J. Appl. Phys. , vol.64 , pp. 3551
- Kim, Y.Y.¹ Lenahan, P.M.²

176
- 0007216094
- H.S. Witham and P.M. Lenahan (1987) IEEE Trans. Nucl. Sci. 54 1147.
- (1987) IEEE Trans. Nucl. Sci. , vol.54 , pp. 1147
- Witham, H.S.¹ Lenahan, P.M.²

177
- 36849130064
- R.A. Weeks (1956) J. Appl. Phys. 27 1376.
- (1956) J. Appl. Phys. , vol.27 , pp. 1376
- Weeks, R.A.¹

178
- 0021334577
- J.A. Weil (1984) Phys. Chem. Minerals 10 149.
- (1984) Phys. Chem. Minerals , vol.10 , pp. 149
- Weil, J.A.¹

179
- 0028764496
- R.A. Weeks (1994) J. Non-Cryst. Solids 179 1.
- (1994) J. Non-Cryst. Solids , vol.179 , pp. 1
- Weeks, R.A.¹

180
- 49549158861
- F.J. Feigl, W.B. Fowler and K.L. Yip (1974) Solid State Commun. 14 225.
- (1974) Solid State Commun. , vol.14 , pp. 225
- Feigl, F.J.¹ Fowler, W.B.² Yip, K.L.³

181
- 0000487316
- K.L. Yip and W.B. Fowler (1975) Phys. Rev. B 11 2327.
- (1975) Phys. Rev. B , vol.11 , pp. 2327
- Yip, K.L.¹ Fowler, W.B.²

182
- 0000789191
- J.K. Rudra and W.B. Fowler (1987) Phys. Rev. B 35 8223.
- (1987) Phys. Rev. B , vol.35 , pp. 8223
- Rudra, J.K.¹ Fowler, W.B.²

183
- 0001727826
- K.S. Snyder and W.B. Fowler (1993) Phys. Rev. B 48 13238.
- (1993) Phys. Rev. B , vol.48 , pp. 13238
- Snyder, K.S.¹ Fowler, W.B.²

184
- 0000734410
- M. Boero, A. Pasquarello, J. Sarnthein and R. Car (1997) Phys. Rev. Lett. 78 887.
- (1997) Phys. Rev. Lett. , vol.78 , pp. 887
- Boero, M.¹ Pasquarello, A.² Sarnthein, J.³ Car, R.⁴

185
- 0003641685
- G. Pacchioni, L. Skuja, D.L. Griscom (Eds), Dordrecht: Kluwer, For a recent theoretical review, see
- G. Pacchioni (2000) Defects in SiO2 and Related Dielectrics: Science and Technology, NATO Science Series. G. Pacchioni, L. Skuja, D.L. Griscom (Eds) Dordrecht: Kluwer 161. For a recent theoretical review, see
- (2000) 2 and Related Dielectrics: Science and Technology, NATO Science Series , pp. 161
- Pacchioni, G.¹

186
- 0035844586
- T. Uchino, M. Takahashi and T. Yoko (2001) Phys. Rev. Lett. 86 5522.
- (2001) Phys. Rev. Lett. , vol.86 , pp. 5522
- Uchino, T.¹ Takahashi, M.² Yoko, T.³

187
- 36549098783
- L.P. Trombetta, G.J. Gerardi, D.J. DiMaria and E. Tierney (1988) J. Appl. Phys. 64 2434.
- (1988) J. Appl. Phys. , vol.64 , pp. 2434
- Trombetta, L.P.¹ Gerardi, G.J.² DiMaria, D.J.³ Tierney, E.⁴

188
- 0001518203
- B.J. Mrstik, V.V. Afanas'ev, A. Stesmans, et al. (1999) J. Appl. Phys. 85 6577.
- (1999) J. Appl. Phys. , vol.85 , pp. 6577
- Mrstik, B.J.¹ Afanas'ev, V.V.² Stesmans, A.³

189
- 0026838593
- W.L. Warren, E.H. Poindexter, M. Offenberg and W. Müller-Warmuth (1992) J. Electrochem. Soc. 139 872.
- (1992) J. Electrochem. Soc. , vol.139 , pp. 872
- Warren, W.L.¹ Poindexter, E.H.² Offenberg, M.³ Müller-Warmuth, W.⁴

190
- 84882882644
- J.F. Conley Jr, P.M. Lenahan, H.L. Evans, et al. (1999) J. Appl. Phys. 85 6577.
- (1999) J. Appl. Phys. , vol.85 , pp. 6577
- Conley, J.F.¹ Lenahan, P.M.² Evans, H.L.³

191
- 0035843263
- V.V. Afanas'ev and A. Stesmans (2001) Europhys. Lett. 53 233.
- (2001) Europhys. Lett. , vol.53 , pp. 233
- Afanas'ev, V.V.¹ Stesmans, A.²

192
- 0000127521
- J. Phys, Condens. Matter 12 2285.
- (2000) J. Phys, Condens. Matter , vol.12 , pp. 2285

193
- 0037116019
- A. Stirling and A. Pasquarello (2002) Phys. Rev. B 66 245201.
- (2002) Phys. Rev. B , vol.66 , pp. 245201
- Stirling, A.¹ Pasquarello, A.²

194
- 0036838849
- V.V. Afanas'ev, F. Ciobaru, G. Pensl and A. Stesmans (2002) Solid State Electron. 46 1815.
- (2002) Solid State Electron. , vol.46 , pp. 1815
- Afanas'ev, V.V.¹ Ciobaru, F.² Pensl, G.³ Stesmans, A.⁴

195
- 3342917495
- M. Xiao, I. Martin, E. Yablonovitch and H.W. Jiang (2004) Nature 430 435.
- (2004) Nature , vol.430 , pp. 435
- Xiao, M.¹ Martin, I.² Yablonovitch, E.³ Jiang, H.W.⁴

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.