Hydrogen passivation of carbon P b like centers at the 3C- and 4H-SiCSiO 2 interfaces in oxidized porous SiC

Applied Physics Letters

Volumn 88, Issue 9, 2006, Pages

  Cantin, J L ^a   Von Bardeleben, H J ^a   Ke, Yue ^b   Devaty, R P ^b   Choyke, W J ^b  

^a INSTITUT DES NANOSCIENCES DE PARIS   (France)

^b UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON DANGLING BOND (PBC); DISSOCIATION ENERGY;

OXIDATION; PARAMAGNETIC RESONANCE; POROUS MATERIALS; SILICON CARBIDE;

CARBON;

EID: 33644751209     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2179128     Document Type: Article

References (22)

1. N. S. Saks, S. S. Mani, and A. K. Agarwal, Appl. Phys. Lett. 76, 2250 (2000).
2. W. Lu, L. C. Feldman, Y. Song, S. Dhar, W. E. Collins, W. C. Mitchel, and J. R. Williams, Appl. Phys. Lett. 85, 3495 (2004).
3. S. Dhar, L. C. Feldman, K. C. Chang, Y. Cao, L. M. Porter, J. Bentley, and J. R. Williams, J. Appl. Phys. 97, 074902 (2005).
4. E. Pippel, J. Woltersdorf, H. O. Olafson, and E. O. Sveinbjornsson, J. Appl. Phys. 97, 034302 (2005).
5. H. J. von Bardeleben, J. L. Cantin, M. Mynbaeva, S. E. Saddow, Y. Shiskin, R. P. Devaty, and W. J. Choyke, in "Silicon Nitride and Silicon Dioxyde Thin Insulating Films VII", Electrochemical Society Proceedings. 2003-2, edited by, R. E. Sah, M. J. Deen, D. Landheer, K. B. Sundaram, W. D. Brown, and, D. Misra, 39 (The Electrochemical Society, Inc., 2003).
6. J. L. Cantin, H. J. von Bardeleben, Y. Ke, Y. Shiskin, R. P. Devaty, and W. J. Choyke, Phys. Rev. Lett. 92, 015502 (2004).
7. H. J. von Bardeleben, J. L. Cantin, Y. Shiskin, R. P. Devaty, and W. J. Choyke, Mater. Sci. Forum 457-460, 1457 (2004).
8. H. J. von Bardeleben, J. L. Cantin, Y. Ke, Y. Shiskin, R. P. Devaty, and W. J. Choyke, Mater. Sci. Forum 483-485, 273 (2005).
9. K. L. Brower, Phys. Rev. B 38, 9657 (1988).
10. K. L. Brower, Phys. Rev. B 42, 3444 (1990).
11. A. Stesmans, Appl. Phys. Lett. 0003-6951 10.1063/1.116308 68, 2076 (1996); A. Stesmans, Appl. Phys. Lett. 68, 2723 (1996).
12. A. Stesmans, Appl. Phys. Lett. 0003-6951 10.1063/1.116308 68, 2076 (1996); A. Stesmans, Appl. Phys. Lett. 68, 2723 (1996).
13. A. Stesmans, J. Appl. Phys. 92, 1317 (2002).
14. K. Fukuda, W. J. Cho, K. Arai, S. Suzuki, J. Senaki, and T. Tanaka, Appl. Phys. Lett. 77, 866 (2000).
15. G. Y. Chung, J. R. Williams, K. Mc Donald, and L. C. Feldman, J. Phys.: Condens. Matter 16, S1857 (2004).
16. Y. Shiskin, W. J. Choyke, and R. P. Devaty, Mater. Sci. Forum 457-460, 1467 (2004).
17. Y. Shiskin, Y. Ke, R. P. Devaty, and W. J. Choyke, Mater. Sci. Forum 483-485, 251 (2005).
18. A. R. Wilkinson and R. G. Elliman, Phys. Rev. B 68, 155302 (2003).
19. J. H. Stathis, J. Appl. Phys. 77, 6205 (1995).
20. R. Khatri, P. Asoka-Kumar, B. Nielsen, L. O. Roellig, and K. G. Lynn, Appl. Phys. Lett. 65, 330 (1994).
21. P. J. Mac Farlane and M. E. Zvanut, J. Electron. Mater. 28, 144 (1998).
22. P. J. Mac Farlane and M. E. Zvanut, J. Appl. Phys. 88, 4122 (2000).