Dangling bond defects at Si-SiO2 interfaces: Atomic structure of the Pb1 center

Physical Review Letters

Volumn 85, Issue 13, 2000, Pages 2773-2776

  Stirling, András ^b   Pasquarello, Alfredo ^a,c   Charlier, J C ^a,d   Car, Roberto ^a,e  

^a INSTITUT ROMAND DE RECHERCHE NUMÉRIQUE EN PHYSIQUE DES MATÉRIAUX IRRMA   (Switzerland)

^b Institute of Isotope and Surface Chemistry   (Hungary)

^c EPFL   (Switzerland)

^d UNIVERSITÉ CATHOLIQUE DE LOUVAIN   (Belgium)

^e PRINCETON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL BONDS; COLOR CENTERS; CRYSTAL ATOMIC STRUCTURE; INTERFACES (MATERIALS); MATHEMATICAL MODELS; RELAXATION PROCESSES;

DANGLING BONDS DEFECTS; FIRST-PRINCIPLE METHOD;

SILICA;

EID: 0034714677     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.85.2773     Document Type: Article

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