Electrical detection of the spin resonance of a single electron in a silicon field-effect transistor

Nature

Volumn 430, Issue 6998, 2004, Pages 435-439

  Xiao, M ^a   Martin, I ^b   Yablonovitch, E ^a   Jiang, H W ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b LOS ALAMOS NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CHARGE; FIELD EFFECT TRANSISTORS; MAGNETIC RESONANCE; SCANNING TUNNELING MICROSCOPY;

ELECTRICAL DETECTION; SPIN RESONANCE;

TRANSISTORS;

NITROGEN; SILICON; SILICON DIOXIDE;

ELECTRON;

ARTICLE; ELECTRIC CURRENT; ELECTRON TRANSPORT; ENERGY; MONITOR; NUCLEAR MAGNETIC RESONANCE IMAGING; PRIORITY JOURNAL; QUANTUM MECHANICS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR;

SIO;

EID: 3342917495     PISSN: 00280836     EISSN: None     Source Type: Journal    
DOI: 10.1038/nature02727     Document Type: Article

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