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Volumn 13, Issue 28, 2001, Pages

Electron spin resonance observation of Si dangling-bond-type defects at the interface of (100) Si with ultrathin layers of SiOx, Al2O3 and ZrO2

(2) Stesmans, A a Afanas'ev, V V a

a UNIVERSITY OF LEUVEN (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; ANNEALING; DESORPTION; ELECTRON SPIN RESONANCE SPECTROSCOPY; HYDROGEN; INTERFACES (MATERIALS); PASSIVATION; PHOTOCHEMICAL REACTIONS; SILICA; STRESSES; ULTRATHIN FILMS; ZIRCONIA;

DANGLING BOND TYPE DEFECT; PARAMAGNETIC POINT DEFECT; PASSIVATING HYDROGEN; PHOTODESORPTION;

SEMICONDUCTING SILICON;

EID: 0035898325 PISSN: 09538984 EISSN: None Source Type: Journal
DOI: 10.1088/0953-8984/13/28/103 Document Type: Letter

Times cited : (30)

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