In situ ESR Observation of Interface Dangling Bond Formation Processes During Ultrathin SiO2 Growth On Si(111)

Physical Review Letters

Volumn 92, Issue 10, 2004, Pages

  Futako, W ^a   Mizuochi, N ^a,b   Yamasaki, S ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL DEFECTS; ELECTRON DIFFRACTION; ELLIPSOMETRY; EPITAXIAL GROWTH; HYDROGENATION; INTERFACES (MATERIALS); OXIDATION; OXYGEN; PARAMAGNETIC RESONANCE; SILICON;

CONTINUOUS WAVES (CW); ELECTRON SPIN RESONANCE (ESR) SPECTROMETER; INTERFACE DANGLING BOND (DB); LONG-RANGE ACCUMULATION;

SILICA;

EID: 2142643724     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.92.105505     Document Type: Article

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