Influence of in situ applied stress during thermal oxidation of (111)Si on Pb interface defects

Applied Physics Letters

Volumn 82, Issue 18, 2003, Pages 3038-3040

  Stesmans, A ^a   Pierreux, D ^a   Jaccodine, R J ^b   Lin, M T ^b   Delph, T J ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b Lehigh University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRESS; DEFECTS; INTERFACES (MATERIALS); OXIDATION; PARAMAGNETIC RESONANCE; PLASTIC DEFORMATION; SEMICONDUCTING FILMS; TENSILE STRESS;

THERMAL OXIDATION;

SEMICONDUCTING SILICON;

EID: 0037514402     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1555277     Document Type: Article

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