Analysis of defects at the interface between high-k thin films and (1 0 0) silicon

Microelectronic Engineering

Volumn 80, Issue SUPPL., 2005, Pages 74-77

  Jones, B J ^b   Barklie, R C ^a  

^a TRINITY COLLEGE DUBLIN   (Ireland)

^b UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

Aluminium oxide; Defects; EPR; High k; Interfaces; Thin films

Indexed keywords

ACTIVATION ENERGY; ALUMINUM COMPOUNDS; ANNEALING; DEFECTS; DEPOSITION; ELECTRON SPIN RESONANCE SPECTROSCOPY; OXIDATION; PARAMAGNETISM; PASSIVATION; PERMITTIVITY;

ATOMIC LAYER DEPOSITION; DEFECT DENSITY; FORMING GAS ANNEALING (FGA); POST DEPOSITION ANNEALING (PDA);

THIN FILMS;

EID: 19944420155     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2005.04.046     Document Type: Conference Paper

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