The role of hydrogen atoms (H atoms) in metastable defect formation at Si-SiO2 interfaces and in hydrogenated amorphous Si (a-Si:H)

Physica Status Solidi (A) Applied Research

Volumn 159, Issue 1, 1997, Pages 5-15

  Lucovsky, G ^a   Yang, H Y ^a   Jing, Z ^a   Whitten, J L ^a  

^a NORTH CAROLINA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS SILICON; ATOMS; BONDING; DEFECTS; FIELD EFFECT TRANSISTORS; HYDROGEN; INTERFACES (MATERIALS); SEMICONDUCTING SILICON; SILICA; SOLAR CELLS;

DEFECT METASTABILITY; DEFECT REACTION EQUATIONS; QUANTUM CHEMISTRY;

SEMICONDUCTOR DEVICE STRUCTURES;

EID: 0030676540     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(199701)159:1<5::AID-PSSA5>3.0.CO;2-L     Document Type: Article

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