Location, structure, and density of states of NBTI-induced defects in plasma nitrided pMOSFETs

Annual Proceedings - Reliability Physics (Symposium)

Volumn , Issue , 2007, Pages 503-510

  Campbell, J P ^a   Lenahan, P M ^a   Krishnan, A T ^b   Krishnan, S ^b  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECTS; DIELECTRIC MATERIALS; NITRIDING; PLASMAS; SILICA; SPECTROSCOPIC ANALYSIS;

DEFECT CENTERS; DENSITY OF STATES; SPIN-DEPENDENT RECOMBINATION;

MOSFET DEVICES;

EID: 34548707965     PISSN: 00999512     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RELPHY.2007.369942     Document Type: Conference Paper

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