Hot-electron induced passivation of silicon dangling bonds at the Si(111)/SiO2 interface

Applied Physics Letters

Volumn 69, Issue 1, 1996, Pages 103-105

  Cartier, E ^a   Stathis, J H ^a  

^a IBM T J WATSON RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000902830     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118088     Document Type: Article

References (22)

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