Inherent density of point defects in thermal tensile strained (100) SiSiO2 entities probed by electron spin resonance

Applied Physics Letters

Volumn 89, Issue 15, 2006, Pages

  Stesmans, A ^a   Somers, P ^a   Afanas'ev, V V ^a   Claeys, C ^b   Simoen, E ^b  

^a UNIVERSITY OF LEUVEN   (Belgium)

^b IMEC   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE GRADE QUALITY; INTERFACE TRAPS; TENSILE STRAIN;

GROWTH (MATERIALS); PARAMAGNETIC RESONANCE; SEMICONDUCTING SILICON; TENSILE STRENGTH;

POINT DEFECTS;

EID: 33750015285     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2339033     Document Type: Article

References (23)

1. The International Technology Roadmap for Semiconductors (SIA, San Jose, CA, 2003).
2. J. Welser, J. L. Hoyt, S. Takagi, and J. F. Gibbons, International Electron Device Meeting Digest 1994 (IEEE, New York, 1994), p. 373.
3. C. W. Leitz, M. T. Curie, M. L. Lee, Z.-Y. Cheng, D. A. Antoniadis, and E. A. Fitzgerald, J. Appl. Phys. 92, 3745 (2002).
4. M. V. Fischetti, F. Gámiz, and W. Hänsch, J. Appl. Phys. 92, 7320 (2002).
5. J. B. Roldán, F. Gámiz, P. Cartujo-Cassinello, P. Cartujo, J. E. Carceller, and A. Roldan, IEEE Trans. Electron Devices 50, 1408 (2003).
6. G. J. Gerardi, E. H. Poindexter, P. J. Caplan, and N. M. Johnson, Appl. Phys. Lett. 0003-6951 10.1063/1.97611 49, 348 (1986); E. H. Pointdexter, Semicond. Sci. Technol. 4, 961 (1989).
7. G. J. Gerardi, E. H. Poindexter, P. J. Caplan, and N. M. Johnson, Appl. Phys. Lett. 0003-6951 10.1063/1.97611 49, 348 (1986); E. H. Pointdexter, Semicond. Sci. Technol. 4, 961 (1989).
8. K. L. Brower, Appl. Phys. Lett. 43, 2418 (1993).
9. A. Stesmans and V. V. Afanas'ev, J. Appl. Phys. 83, 2449 (1998).
10. A. Stesmans, Phys. Rev. B 48, 2418 (1993).
11. C. T. Sah, J. Y. C. Sun, and J. J. T. Tsou, J. Appl. Phys. 0021-8979 10.1063/1.333411 55, 1525 (1984); J. M. M. de Nijs, K. G. Druijf, V. V. Afanas'ev, E. van der Drift, and P. Balk, Appl. Phys. Lett. 65, 2428 (1994); V. V. Afanas'ev, F. Ciobanu, G. Pensl, and A. Stesmans, in Silicon Carbide, edited by, W. J. Choyke, M. Matsunami, and, G. Pensl, (Springer, Berlin, 2004), p. 343.
12. C. T. Sah, J. Y. C. Sun, and J. J. T. Tsou, J. Appl. Phys. 0021-8979 10.1063/1.333411 55, 1525 (1984); J. M. M. de Nijs, K. G. Druijf, V. V. Afanas'ev, E. van der Drift, and P. Balk, Appl. Phys. Lett. 65, 2428 (1994); V. V. Afanas'ev, F. Ciobanu, G. Pensl, and A. Stesmans, in Silicon Carbide, edited by, W. J. Choyke, M. Matsunami, and, G. Pensl, (Springer, Berlin, 2004), p. 343.
13. C. T. Sah, J. Y. C. Sun, and J. J. T. Tsou, J. Appl. Phys. 0021-8979 10.1063/1.333411 55, 1525 (1984); J. M. M. de Nijs, K. G. Druijf, V. V. Afanas'ev, E. van der Drift, and P. Balk, Appl. Phys. Lett. 65, 2428 (1994); V. V. Afanas'ev, F. Ciobanu, G. Pensl, and A. Stesmans, in Silicon Carbide, edited by, W. J. Choyke, M. Matsunami, and, G. Pensl, (Springer, Berlin, 2004), p. 343.
14. A. Stesmans, D. Pierreux, R. J. Jaccodine, M.-T. Lin, and T. J. Delph, Appl. Phys. Lett. 82, 3038 (2003).
15. R. Delhougne, M. Meunier-Beillard, M. Caymax, R. Loo, and W. Vandervorst, Appl. Surf. Sci. 224, 91 (2004).
16. E. Simoen, G. Eneman, P. Verheyen, R. Loo, K. De Meyer, and C. Claeys, IEEE Trans. Electron Devices 53, 1039 (2006).
17. J. Welser, J. L. Hoyt, and J. F. Gibbons, Jpn. J. Appl. Phys., Part 1 33, 2419 (1994).
18. S. H. Olsen, A. G. O'Neill, D. J. Norris, A. G. Cullis, S. J. Bull, S. Chattopadhyay, K. S. K. Kwa, L. S. Drisoll, A. M. Waite, Y. T. Tang, and A. G. R. Evans, Mater. Sci. Eng., B 0921-5107 10.1016/j.mseb.2003.10.014 109, 78 (2004); M. Nishisaka, Y. Hamasaki, O. Shirata, and T. Asano, Jpn. J. Appl. Phys., Part 1 43, 1886 (2004).
19. S. H. Olsen, A. G. O'Neill, D. J. Norris, A. G. Cullis, S. J. Bull, S. Chattopadhyay, K. S. K. Kwa, L. S. Drisoll, A. M. Waite, Y. T. Tang, and A. G. R. Evans, Mater. Sci. Eng., B 0921-5107 10.1016/j.mseb.2003.10.014 109, 78 (2004); M. Nishisaka, Y. Hamasaki, O. Shirata, and T. Asano, Jpn. J. Appl. Phys., Part 1 43, 1886 (2004).
20. N. Sugii, J. Appl. Phys. 89, 6459 (2001).
21. T. Vondrak and X. Y. Zhu, J. Phys. Chem. B 103, 4892 (1999).
22. P. C. Taylor, in Semiconductors and Semimetals, edited by, J. I. Pankove, (Academic, New York, 1984), Vol. 21C, p. 99.
23. V. V. Afanas'ev, Y. G. Fedorenko, and A. Stesmans, Appl. Phys. Lett. 87, 032107 (2005).