Processing aspects in the low-frequency noise of nMOSFETs on strained-silicon substrates

IEEE Transactions on Electron Devices

Volumn 53, Issue 5, 2006, Pages 1039-1047

  Simoen, Eddy ^a   Eneman, Geert ^a,b,c   Verheyen, Peter ^a   Loo, Roger ^a   De Meyer, Kristin ^a,b   Claeys, Cor ^a,b  

^a IMEC   (Belgium)

^b Katholieke Universiteit Leuven   (Belgium)

^c RESEARCH FOUNDATION FLANDERS FWO   (Belgium)

Author keywords

High mobility; Low frequency (LF) noise; Oxide trap density; Strained silicon (SSi) substrates; Threading and misfit dislocations

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTRON MOBILITY; SEMICONDUCTING SILICON; SEMICONDUCTOR DEVICE MANUFACTURE; STRAIN; SUBSTRATES; TRANSCONDUCTANCE;

HIGH MOBILITY; LOW-FREQUENCY NOISE; OXIDE TRAP DENSITY; STRAINED-SILICON SUBSTRATES;

MOSFET DEVICES;

EID: 33646076449     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.871859     Document Type: Article

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