Hydrogen-related hole capture and positive charge build up in buried oxides

Solid-State Electronics

Volumn 46, Issue 11, 2002, Pages 1775-1785

  Rivera, A ^a,b   Van Veen, A ^a   Schut, H ^a   De Nijs, J M M ^b   Balk, P ^b  

^a DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

^b DELFT UNIVERSITY OF TECHNOLOGY   (Netherlands)

Author keywords

Buried oxide; Charge build up; Desorption; E centre; Hole trapping; Positive charge; Positron annihilation; SiO2

Indexed keywords

ANNEALING; DEGRADATION; ELECTRIC CHARGE; ELECTRIC FIELDS; METALLIZING; SILICA;

HOLE TRAPPING;

MOS CAPACITORS;

EID: 0036838891     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(02)00150-8     Document Type: Conference Paper

References (16)

1. Lenahan P.M., Dressendorfer P.V. Hole traps and trivalent silicon centers in metal/oxide/silicon devices. J. Appl. Phys. 55(10):1984;3495.
2. Witham H.S., Lenahan P.M. The nature of the deep hole trap in MOS oxides. IEEE Trans. Nucl. Sci. 34(6):1987;1147.
3. Kim Y.Y., Lenahan P.M. Electron-spin resonance study of radiation-induced paramagnetic defects in oxides grown on (. 1 0 0) silicon substrates J. Appl. Phys. 64(7):1988;3551.
4. 2 layers on silicon J. Phys.: Condens. Matter. 12:2000;2285.
5. See references in [4].
6. 2 layers on Si. Europhys. Lett. 53(2):2001;233.
7. 2 layers on Si. Mat. Sci. Semicond. Process. 4(1-3):2001;149.
8. 2 interface with molecular hydrogen: Simultaneous action of passivation and dissociation J. Appl. Phys. 88(1):2000;489.
9. van Veen A., Schut H., Mijnarends P.E. Coleman P. Positron beams and their applications. 2000;191 World Scientific Publishing, Singapore.
10. van Veen A. Positron beam analysis techniques and gas desorption spectrometry for the characterization of defects in materials. J. Trace Microprobe Tech. 8:1990;1.
11. van Veen A., Schut H., de Vries J., Hakvoort R.A., IJpma M.R. Analysis of positron profiling data by means of "VEPFIT" Schultz P.J., Massoumi G.R., Simpson P.J. Proceedings of the Fourth International Workshop on Slow-Positron Beam Techniques for Solids and Surfaces. 1990;171 AIP, New York.
12. Rivera A., van Veen A., Schut H., de Nijs J.M.M., Balk P., Alkemande P.F.A. The behaviour of deuterium incorporated into the buried oxide of SIMOX. Nucl. Instrum. Methods Phys. Res. B. 178:2001;287.
13. Buchanan D.A., Fischetti M.V., DiMaria D.J. Coulombic and neutral trapping centers in silicon dioxide. Phys. Rev. B. 43(2):1991;1471.
14. Rivera A., Montilla I., Alba García A., Escobar Galindo R., Falub C.V., van Veen A.et al. Mater. Sci. Forum. 363-365:2001;64.
15. Clement M. Positrons in the MOS system (thesis). 1998;156 Delft University Press, Delft.
16. Druijf K.G., de Nijs J.M.M., van der Drift E., Granneman E.H.A., Balk P. Recovery of vacuum ultraviolet irradiated metal-oxide-silicon systems. J. Appl. Phys. 78(1):1995;306.