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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 19, 2001, Pages 1954031-1954036

Intrinsic and H-induced defects at Si-SiO2 interfaces

(1) Chadi, D J a

a NEC LABORATORIES AMERICA (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HYDROGEN; SILICON; SILICON DIOXIDE; WATER;

ARTICLE; ATOM; CHEMICAL ANALYSIS; CHEMICAL STRUCTURE; DIFFUSION; ELECTRON; ENERGY; HYDROGEN BOND; MOLECULAR INTERACTION;

EID: 0035891310 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: None Document Type: Article

Times cited : (22)

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