Paramagnetic defects in annealed ultrathin layers of SiOX, Al2O3, and ZrO2 on (100)Si

Applied Physics Letters

Volumn 85, Issue 17, 2004, Pages 3792-3794

  Stesmans, A ^a   Afanas'ev, V V ^a  

^a UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; CHEMICAL VAPOR DEPOSITION; DIELECTRIC DEVICES; ELECTRON SPIN RESONANCE SPECTROSCOPY; HEAT TREATMENT; MOS DEVICES; ZIRCONIA;

INSULATOR INTERFACES; PARAMAGNETIC DEFECTS; PRECURSORS; ULTRATHIN LAYERS;

SILICON COMPOUNDS;

EID: 9744249425     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1787152     Document Type: Article

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