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Volumn 88, Issue 1, 2000, Pages 489-497

Interaction of Pb defects at the (111)Si/SiO2 interface with molecular hydrogen: Simultaneous action of passivation and dissociation

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EID: 0001291950     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.373684     Document Type: Article
Times cited : (113)

References (43)
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    • d by the same factor. Yet, it hardly affects the notion of "instantaneous escape." In one work, it was ascribed to densitication of the thermal oxide as compared to fused silica [see, B. J. Mrstik, P. J. McMarr, N. S. Saks, R. W. Rendell, and R. B. Klein, Phys. Rev. B 47, 4115 (1993)].
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    • edited by V. J. Kapoor and H. J. Stein (The Electrochemical Society, Pennington, NY)
    • d by the same factor. Yet, it hardly affects the notion of "instantaneous escape." In one work, it was ascribed to densitication of the thermal oxide as compared to fused silica [see, B. J. Mrstik, P. J. McMarr, N. S. Saks, R. W. Rendell, and R. B. Klein, Phys. Rev. B 47, 4115 (1993)].
    • (1983) Silicon Nitride Thin Insulating Films , pp. 94
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    • d by the same factor. Yet, it hardly affects the notion of "instantaneous escape." In one work, it was ascribed to densitication of the thermal oxide as compared to fused silica [see, B. J. Mrstik, P. J. McMarr, N. S. Saks, R. W. Rendell, and R. B. Klein, Phys. Rev. B 47, 4115 (1993)].
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.