Electron spin resonance study of interface defects in atomic layer deposited hafnium oxide on Si

Applied Physics Letters

Volumn 81, Issue 6, 2002, Pages 1128-1130

  Kang, A Y ^a   Lenahan, P M ^a   Conley, J F ^b   Solanki, R ^c  

^a PENNSYLVANIA STATE UNIVERSITY   (United States)

^b SHARP LABORATORIES OF AMERICA   (United States)

^c OREGON HEALTH AND SCIENCE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER CHEMICAL VAPOR DEPOSITION; ATOMIC LAYER DEPOSITED; INTERFACE DEFECTS; INTERFACE TRAPS; SILICON DANGLING BOND;

CHEMICAL VAPOR DEPOSITION; DANGLING BONDS; DEFECTS; ELECTROSPINNING; HAFNIUM; HAFNIUM OXIDES; INTERFACES (MATERIALS); MAGNETIC MOMENTS; OXIDE FILMS; SILICON; SPIN DYNAMICS;

ELECTRON SPIN RESONANCE SPECTROSCOPY;

EID: 79958200231     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1494123     Document Type: Article

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