Electrical evaluation of defects at the Si(100)/HfO2 interface

Journal of the Electrochemical Society

Volumn 151, Issue 8, 2004, Pages

  O'Sullivan, B J ^a   Hurley, P K ^a   O'Connor, E ^a   Modreanu, M ^a   Roussel, H ^b   Jimenez, C ^b   Dubourdieu, C ^b   Audier, M ^b   Senateur J P ^b  

^a UNIVERSITY COLLEGE CORK   (Ireland)

^b Grenoble INP Phelma   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; ELECTRICAL ACTIVITY; ELECTRICAL EVALUATION; SPIN DENSITY;

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; DENSITY (SPECIFIC GRAVITY); ELECTRIC POTENTIAL; ENERGY GAP; INTERFACES (MATERIALS); OXIDATION; PASSIVATION; SILICON; THIN FILMS;

CRYSTAL DEFECTS;

EID: 4344569211     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1765678     Document Type: Article

References (21)

1. G. D. Wilk, R. M. Wallace, and J. M. Anthony, J. Appl. Phys., 89, 5243 (2001).
2. M. Houssa, J. L. Autran, A. Stesmans, and M. M. Heyns, Appl. Phys. Lett., 81, 709 (2002).
3. G. J. Gerardi, E. H. Poindexter, P. J. Caplan, and N. M. Johnson, Appl. Phys. Lett., 49, 348 (1986).
4. E. H. Poindexter, Semicond, Sci. Technol., 4, 961 (1989).
5. M. J. Uren, K. M. Brunson, J. H. Stathls, and E. Cartier, Microelectron. Eng., 36, 219 (1997).
6. A. Stesmans, Phys. Rev. Lett., 70, 1723 (1993).
7. A. Stesmans and V. V. Afanas'ev, Phys. Rev. B, 57, 10030 (1998).
8. A. Stirling, A. Pasquarello, J. C. Charlier, and R. Car, Phys. Rev. Lett., 85, 2773 (2000).
9. P. K. Hurley, B. J. O'Sullivan, F. N. Cubaynes, P. A. Stolk, F. P. Widdershoven, and J. H. Das, J. Electrochem. Soc., 149, 0194 (2002).
10. A. Stesmans and V. V. Afanas'ev, J. Phys.: Condens. Matter, 13, L673 (2001).
11. J. L. Cantin and H. J. von Bardeleben, J. Non-Cryst. Solids, 303, 75 (2002).
12. A. Y. Rang, P. M. Lenahan, J. F. Conley, Jr., and R. Solanki, Appl. Phys. Lett., 81, 1128 (2002).
13. A. Stesmans and V. V. Afanas'ev, Appl. Phys. Lett., 82, 4074 (2003).
14. I. Rang, K. Onishi, Y. Jeon, B. H. Lee, C. Kang, W. J. Qi, R. Nieh, S. Gopalan, R. Choi, and J. C. Lee, in Technical Digest of the International Electron Devices Meeting, San Francisco, CA, p. 35 (2000).
15. J. P. Sénateur, R. Madar, F. Weiss, O. Thomas, and A. Abrutis, Fr. Pat. 2707671 (1993), Eur. Pat. 730671 (1994), U.S. Pat. 945, 162 (1999); J. P. Sénateur, C. Dubourdieu, F. Weiss, M. Rosina, and A. Abrutis, Adv. Mater. Opt. Electron., 10, 155 (2000);
16. J. P. Sénateur, R. Madar, F. Weiss, O. Thomas, and A. Abrutis, Fr. Pat. 2707671 (1993), Eur. Pat. 730671 (1994), U.S. Pat. 945, 162 (1999); J. P. Sénateur, C. Dubourdieu, F. Weiss, M. Rosina, and A. Abrutis, Adv. Mater. Opt. Electron., 10, 155 (2000);
17. C. Dubourdieu, J. P. Sénateur, and F. Weiss, in Crystal Growth in Thin Solid Films: Control of Epitaxy, M. Guilloux-Viry and A. Perrin, Editors, Mater. Sci., Vol. 2, pp. 169-206, ISBN 81-7736-095-7 (2002).
18. D. A. Neumayer and E. Cartier, J. Appl. Phys., 90, 1801 (2001).
19. B. J. O'Sullivan, P. K. Hurley, C. Leveugle, and J. H. Das, J. Appl. Phys., 89, 3811 (2001).
20. P. K. Hurley, A. Stesmans, V. V. Afanas'ev, B. J. O'Sullivan, and E. O'Callaghan, J. Appl. Phys., 93, 3971 (2003).
21. A. Stesmans and V. V. Afanas'ev, Appl. Surf. Sci., 168, 324 (2000).