Epitaxial, high-K dielectrics on silicon: The example of praseodymium oxide

Microelectronics Reliability

Volumn 41, Issue 7, 2001, Pages 991-994

  Osten, H J ^a   Liu, J P ^a   Mussig H J ^a   Zaumseil, P ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DIELECTRIC MATERIALS; INTERFACES (MATERIALS); MOLECULAR BEAM EPITAXY; PRASEODYMIUM COMPOUNDS; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING SILICON;

SOLID SOURCE MOLECULAR BEAM EPITAXY;

ULSI CIRCUITS;

EID: 0035394782     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2714(01)00054-3     Document Type: Article

References (4)