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Volumn 83, Issue 5, 1998, Pages 2449-2457

Electron spin resonance features of interface defects in thermal (100) Si/SiO2

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[No Author keywords available]

Indexed keywords


EID: 0000754322     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.367005     Document Type: Article
Times cited : (172)

References (40)
  • 1
    • 30844431996 scopus 로고
    • and references therein
    • 2 defect physics, see the 13 articles in Semicond. Sci. Technol. 4, 961 (1989), and references therein; E. Poindexter and P. Caplan, Prog. Surf. Sci. 14, 211 (1983).
    • (1989) Semicond.Sci. Technol. , vol.4 , pp. 961
  • 2
    • 30844431996 scopus 로고
    • 2 defect physics, see the 13 articles in Semicond. Sci. Technol. 4, 961 (1989), and references therein; E. Poindexter and P. Caplan, Prog. Surf. Sci. 14, 211 (1983).
    • (1983) Prog. Surf. Sci. , vol.14 , pp. 211
    • Poindexter, E.1    Caplan, P.2
  • 16
    • 11544321991 scopus 로고    scopus 로고
    • A. Stesmans, Appl. Phys. Lett. 68, 2723 (1996); ibid. 68, 2076 (1996).
    • (1996) Appl. Phys. Lett. , vol.68 , pp. 2076
  • 18
    • 0002439260 scopus 로고
    • edited by C. R. Helms and B. E. Deal Plenum, New York
    • 2 Interface, edited by C. R. Helms and B. E. Deal (Plenum, New York, 1988), p. 271.
    • (1988) 2 Interface , pp. 271
    • Edwards, A.H.1
  • 20
    • 85034280055 scopus 로고    scopus 로고
    • note
    • 2 structures as, e.g., encountered in SIMOX and PS.
  • 23
    • 0001396055 scopus 로고
    • K. L. Brower, Phys. Rev. B 33, 4471 (1986); A. Stesmans and J. Braet, Insulating Films on Semiconductors, edited by J. J. Simonne and J. Buxo (Elsevier, Amsterdam, 1986), p. 25.
    • (1986) Phys. Rev. B , vol.33 , pp. 4471
    • Brower, K.L.1
  • 24
    • 0022863005 scopus 로고
    • edited by J. J. Simonne and J. Buxo Elsevier, Amsterdam
    • K. L. Brower, Phys. Rev. B 33, 4471 (1986); A. Stesmans and J. Braet, Insulating Films on Semiconductors, edited by J. J. Simonne and J. Buxo (Elsevier, Amsterdam, 1986), p. 25.
    • (1986) Insulating Films on Semiconductors , pp. 25
    • Stesmans, A.1    Braet, J.2
  • 25
    • 85034309698 scopus 로고    scopus 로고
    • note
    • g⊥ contribution is seen to dominate, a Voigt profile appears appropriate.
  • 29
    • 85034278013 scopus 로고    scopus 로고
    • note
    • 2, the intensity ratio need not necessarily be exactly 1:2:1, i.e., the sum of the intensity of the outer branches need not necessarily be equal to the central one: the ratio may somewhat depend on the level of atomic flatness over a macroscopic interface area.
  • 36
    • 85034280566 scopus 로고    scopus 로고
    • note
    • precipitate, etc.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.