Investigation of point defects at the high-k oxides/Si(1 0 0) interface by electrically detected magnetic resonance

Journal of Non-Crystalline Solids

Volumn 322, Issue 1-3, 2003, Pages 168-173

  Baldovino, S ^a,b   Nokhrin, S ^a   Scarel, G ^a   Fanciulli, M ^a   Graf, T ^b   Brandt, M S ^b  

^a LABORATORIO MDM   (Italy)

^b WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC MATERIALS; MAGNETIC RESONANCE; PARAMAGNETISM;

SILICON DANGLING BOND;

POINT DEFECTS;

EID: 0038690243     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(03)00277-1     Document Type: Conference Paper

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