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Volumn 207, Issue 1, 2010, Pages 9-18

Recent advances in the MOVPE growth of indium nitride

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE QUALITY; DEVICE APPLICATION; DOUBLE-STEP; ELECTRICAL PROPERTY; GROWTH PROCESS; INDIUM NITRIDE; INN LAYERS; LATERAL GROWTH; LATTICE-MATCHED SUBSTRATES; LOW GROWTH RATE; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; MOVPE GROWTH; SCIENTIFIC COMMUNITY; THERMAL-ANNEALING;

EID: 74549205414     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200982642     Document Type: Article
Times cited : (56)

References (90)
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    • F. Matsuda, Y. Saito, T. Muramatsu, T. Yamaguchi, Y. Matsuo, A. Koukitu, T. Araki, and Y. Nanishi, Phys. Status Solidi C 0, (7), 2810 (2003).
  • 53
    • 2942667139 scopus 로고    scopus 로고
    • T. Matsuoka, H. Okamoto, and M. Nakao, Phys. Status Solidi C 0, (7), 2806 (2003).
    • T. Matsuoka, H. Okamoto, and M. Nakao, Phys. Status Solidi C 0, (7), 2806 (2003).


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.