Growth and Characterization of Epitaxial InN Films on Sapphire Substrate Using an ArF Excimer Laser-Assisted Metalorganic Vapor-Phase Epitaxy (LA-MOVPE)

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 12, 2003, Pages 7284-7289

  Bhuiyan, Ashraful Ghani ^a   Tanaka, Tatsuya ^a   Kasashima, Ken ^a   Hashimoto, Akihiro ^a   Yamamoto, Akio ^a,b  

^a UNIVERSITY OF FUKUI   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

ArF excimer laser; InN; MOVPE; NH3; TMI

Indexed keywords

ALLOYING; AMMONIA; DECOMPOSITION; DEPOSITION; ELECTRON TRANSPORT PROPERTIES; EXCIMER LASERS; FILM GROWTH; INDIUM COMPOUNDS; THERMAL EFFECTS; VAPOR PHASE EPITAXY;

ARF EXCIMER LASER; INDIUM NITRIDE (INN); METALORGANIC VAPOR PHASE EPITAXY (MOVPE); TMI;

METALLIC FILMS;

EID: 1242265306     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.7284     Document Type: Article

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