Influence of growth temperature and V/III ratio on the optical characteristics of narrow band gap (0.77 eV) InN grown on GaN/sapphire using pulsed MOVPE

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4947-4953

  Jamil, Muhammad ^a   Zhao, Hongping ^a   Higgins, John B ^b   Tansu, Nelson ^a  

^a Lehigh University   (United States)

^b AIR PRODUCTS AND CHEMICALS INC   (United States)

Author keywords

A1. Photoluminescence; A3. MOCVD; B1. Nitrides; B2. InN

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; ELECTRONIC PROPERTIES; GROWTH TEMPERATURE; INERTIAL CONFINEMENT FUSION; LIGHT EMISSION; LUMINESCENCE; NITRIDES; PHOTOLUMINESCENCE; THEOREM PROVING;

A1. PHOTOLUMINESCENCE; A3. MOCVD; B1. NITRIDES; B2. INN; CYCLE TIMES; ELECTRICAL QUALITIES; GAN/SAPPHIRE; GROWTH CONDITIONS; GROWTH MODES; GROWTH PRESSURES; INN FILMS; METAL ORGANIC; METALLIC DROPLETS; MORPHOLOGICAL EVOLUTIONS; NARROW BAND GAPS; OPTICAL CHARACTERISTICS; OPTICAL-; OVERGROWN FILMS; REACTOR CHAMBERS; V/III RATIOS; VERTICAL REACTORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 56249120198     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.07.122     Document Type: Article

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