Influence of hydrogen input partial pressure on the polarity of InN on GaAs (1 1 1)A grown by metalorganic vapor phase epitaxy

Journal of Crystal Growth

Volumn 310, Issue 7-9, 2008, Pages 1602-1606

  Murakami, Hisashi ^a   Eriguchi, Ken ichi ^a   Torii, Jun ichi ^a   Cho, Hyun Chol ^a   Kumagai, Yoshinao ^a   Koukitu, Akinori ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

A1. Surface structure; A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Semiconducting indium compounds

Indexed keywords

CRYSTALLINE MATERIALS; DECOMPOSITION; DEGRADATION; HYDROGEN; SEMICONDUCTING INDIUM COMPOUNDS;

HYDROGEN CARRIER GAS; INPUT PARTIAL PRESSURE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 41449112797     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.103     Document Type: Article

References (10)

1. Foutz B.E., O'Leary S.K., Shur M.S., and Eastman L.F. J. Appl. Phys. 85 (1999) 7727
2. Nanishi Y., Saito Y., and Yamaguchi T. Jpn. J. Appl. Phys. 42 (2003) 2549
3. Muto D., Naoi H., Araki T., Kitagawa S., Kurouchi M., Na H., and Nanishi Y. Phys. Stat. Sol. (a) 203 (2006) 1691
4. Bhuiyan A.G., Tanaka T., Yamamoto A., and Hashimoto A. Phys. Stat. Sol. (a) 194 (2002) 502
5. Matsuoka T., Okamoto H., Nakao M., Harima H., and Kurimoto E. Appl. Phys. Lett. 81 (2002) 1246
6. Murakami H., Torii J., Kumagai Y., and Koukitu A. J. Crystal Growth 298 (2007) 387
7. Kangawa Y., Kawaguchi N., Hida K., Kumagai Y., and Koukitu A. Jpn. J. Appl. Phys. 43 (2004) L1026
8. Muto D., Araki T., Naoi H., Matsuda F., and Nanishi Y. Phys. Stat. Sol. (a) 202 (2005) 773
9. Koukitu A., Mayumi M., and Kumagai Y. J. Crystal Growth 246 (2002) 230
10. Koukitu A., Taki T., Takahashi N., and Seki H. J. Crystal Growth 197 (1999) 99