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Volumn 95, Issue 4, 2009, Pages

The epitaxial growth of indium nitride using berlinite (AlPO4) and other piezoelectric crystals of the quartz family as substrates

(5) Moret, M a Ruffenach, S a Briot, O a Gil, B a Pauthe, M b

a UNIV MONTPELLIER (France)

b CNRS DR13 (France)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN; C-PLANE SAPPHIRE; ELECTRICAL PROPERTY; INDIUM NITRIDE; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; NONPOLAR M-PLANE; PIEZOELECTRIC CRYSTALS; PIEZOELECTRIC SUBSTRATES;

CORUNDUM; CRYSTAL GROWTH; ELECTRIC PROPERTIES; EPITAXIAL GROWTH; GALLIUM NITRIDE; HYDROTHERMAL SYNTHESIS; INDIUM; OPTICAL PROPERTIES; ORGANOMETALLICS; OXIDE MINERALS; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; QUARTZ; SEMICONDUCTING GALLIUM; SUBSTRATES;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 68249109610 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3193655 Document Type: Article

Times cited : (8)

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