The high mobility InN film grown by MOCVD with GaN buffer layer

Journal of Crystal Growth

Volumn 298, Issue SPEC. ISS, 2007, Pages 409-412

  Xie, Z L ^a   Zhang, R ^a   Liu, B ^a   Li, L ^a   Liu, C X ^a   Xiu, X Q ^a   Zhao, H ^a   Han, P ^a   Gu, S L ^a   Shi, Y ^a   Zheng, Y D ^a  

^a NANJING UNIVERSITY   (China)

Author keywords

A1. Crystal structure; A1. X ray diffraction; A3. Vapor phase epitaxy; B1. InN; B2. Semiconducting indium compound

Indexed keywords

BUFFER LAYERS; ENERGY BAND; SAPPHIRE SUBSTRATES; SAPPHIRE WAFERS;

ANNEALING; CARRIER CONCENTRATION; CRYSTAL STRUCTURE; GALLIUM NITRIDE; INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SAPPHIRE; SEMICONDUCTING INDIUM COMPOUNDS; VAPOR PHASE EPITAXY; X RAY DIFFRACTION;

FILM GROWTH;

EID: 33846446716     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.11.026     Document Type: Article

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