Growth and characterization of InN thin film by metal-organic vapor phase epitaxy (MOVPE) on different buffers

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 6, 2008, Pages 1594-1599

  Chang, P H ^a   Wei, Y Y ^a   Chen, C W ^a   Peng, H C ^a   Ling, D C ^b   Chen, N C ^a   Chang, C A ^a  

^a CHANG GUNG UNIVERSITY   (Taiwan)

^b TAMKANG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

HIGH QUALITY; INN FILMS; INN THIN FILMS; KOSTERLITZ-THOULESS TRANSITIONS; METAL-ORGANIC VAPOR PHASE EPITAXY; NITROGEN VACANCIES; SAPPHIRE SUBSTRATES; SINGLE-CRYSTALLINE; SUPERCONDUCTING NETWORKS; TEMPERATURE-DEPENDENT RESISTANCE; TRANSPORT CHARACTERISTICS; WURTZITES; ZERO MAGNETIC FIELDS;

CRYSTAL GROWTH; FILM GROWTH; MAGNETIC FIELDS; NITRIDES; PHASE TRANSITIONS; SEMICONDUCTOR GROWTH; SUPERCONDUCTIVITY; THIN FILMS; VAPORS; ZINC SULFIDE;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 74549114199     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200778515     Document Type: Conference Paper

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