Effects of rapid thermal annealing on the optical and electrical properties of InN epilayers

Journal of Physics Condensed Matter

Volumn 18, Issue 42, 2006, Pages

  Shu, G W ^a   Wu, P F ^a   Liu, Y W ^a   Wang, J S ^a   Shen, J L ^a   Lin, T Y ^b   Pong, P J ^c   Chi, G C ^c   Chang, H J ^d   Chen, Y F ^d   Lee, Y C ^e  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b NATIONAL TAIWAN OCEAN UNIVERSITY   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^e TUNG NAN INSTITUTE OF TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER MOBILITY; ELECTRIC PROPERTIES; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; THERMAL EFFECTS;

COMPENSATING ACCEPTORS (INDIUM VACANCIES); RAPID THERMAL ANNEALING (RTA);

INDIUM COMPOUNDS;

EID: 33750589882     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/18/42/L02     Document Type: Article

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