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Volumn 79, Issue 16, 2009, Pages

Carrier mass measurements in degenerate indium nitride

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EID: 66149161898     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.165207     Document Type: Article
Times cited : (28)

References (38)
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    • Bimberg, D.1
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    • 10.1103/PhysRevB.12.5739
    • D. C. Tsui, Phys. Rev. B 12, 5739 (1975). 10.1103/PhysRevB.12.5739
    • (1975) Phys. Rev. B , vol.12 , pp. 5739
    • Tsui, D.C.1
  • 35
    • 41649095482 scopus 로고    scopus 로고
    • The parameters entering into the simulation are the band-gap energy (Eg), the electron mass, and the electron density (ne). The static dielectric constant was kept equal to εr =10.5 ε0 (see Ref.) and the hole mass equal to mh =0.42 m0 [10.1063/1.2906374
    • The parameters entering into the simulation are the band-gap energy (Eg), the electron mass, and the electron density (ne). The static dielectric constant was kept equal to εr =10.5 ε0 (see Ref.) and the hole mass equal to mh =0.42 m0 [X. Wang, S.-B. Che, Y. Ishitani, and A. Yoshikawa, Appl. Phys. Lett. 92, 132108 (2008)]. The electron mass values employed are those derived by the analysis of the magnetic field data presented in Fig. 3. The band-gap energy too is equal (=0.642 eV) for all samples. 10.1063/1.2906374
    • (2008) Appl. Phys. Lett. , vol.92 , pp. 132108
    • Wang, X.1    Che, S.-B.2    Ishitani, Y.3    Yoshikawa, A.4


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