The most possible donor in InN grown by metalorganic vapor-phase epitaxy

Thin Solid Films

Volumn 494, Issue 1-2, 2006, Pages 74-78

  Yamamoto, Akio ^a,b   Miwa, Hiroshi ^a   Shibata, Yosuke ^a   Hashimoto, Akihiro ^a  

^a UNIVERSITY OF FUKUI   (Japan)

^b JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

Chemical vapor deposition; Electrical properties and measurements; Indium nitride

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EXCIMER LASERS; FILM GROWTH; IMPURITIES; INDIUM COMPOUNDS; METALLORGANIC VAPOR PHASE EPITAXY; OXYGEN;

ELECTRICAL PROPERTIES AND MEASUREMENTS; FILM QUALITY; INDIUM NITRIDE;

THIN FILMS;

EID: 27844535806     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2005.07.175     Document Type: Conference Paper

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