Intrinsic Electron Accumulation at Clean InN Surfaces

Physical Review Letters

Volumn 92, Issue 3, 2004, Pages 368041-368044

  Mahboob, I ^a   Veal, T D ^a   McConville, C F ^a   Lu, H ^b   Schaff, W J ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b School of Civil and Environmental Engineering   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

APPROXIMATION THEORY; CAPACITANCE; CARRIER CONCENTRATION; CLEANING; ELECTRIC FIELD EFFECTS; ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC STRUCTURE; ENERGY GAP; FERMI LEVEL; HYDROGEN; IONIZATION; MOLECULAR BEAM EPITAXY; PHONONS; PROBABILITY DENSITY FUNCTION; SURFACE PHENOMENA;

ATOMIC HYDROGEN CLEANING (AHC); CONDUCTION BAND MINIMUM (CBM); LOCAL DENSITY APPROXIMATION (LDA); QUASIPARTICLES (QP);

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 1442355676     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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