Drift current dominated terahertz radiation from InN at low-density excitation

Applied Physics Letters

Volumn 93, Issue 26, 2008, Pages

  Lin, K I ^a   Tsai, J T ^a   Wang, T S ^a   Hwang, J S ^a   Chen, M C ^b   Chi, G C ^c  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b INSTITUTE OF NUCLEAR ENERGY RESEARCH   (Taiwan)

^c NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CORUNDUM; ELECTRIC FIELD EFFECTS; ELECTRIC FIELDS; ELECTROMAGNETIC PULSE; ELECTROMAGNETIC WAVE EMISSION; INDIUM ARSENIDE; NITRIDES; SAPPHIRE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS;

AZIMUTHAL ANGLES; CENTRAL WAVELENGTHS; DEMBER EFFECTS; DRIFT CURRENTS; FEMTOSECOND OPTICAL PULSES; INDIUM NITRIDES; INDUCED ELECTRIC FIELDS; INTERNAL ELECTRIC FIELDS; METALORGANIC CHEMICAL VAPOR DEPOSITIONS; N POLARITIES; OPTICAL RECTIFICATIONS; RADIATION MECHANISMS; REFLECTION GEOMETRIES; SILICON SUBSTRATES; SPONTANEOUS POLARIZATIONS; SURFACE ACCUMULATIONS; TERAHERTZ RADIATIONS; WAVE FORMS;

RADIATION;

EID: 58149268953     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3056635     Document Type: Article

References (18)

1. A. G. Bhuiyan, A. Hashimoto, and A. Yamamoto, J. Appl. Phys. 94, 2779 (2003).
2. S. P. Fu, T. T. Chen, and Y. F. Chen, Semicond. Sci. Technol. 21, 244 (2006).
3. R. Ascázubi, I. Wilke, K. Denniston, H. Lu, and W. J. Schaff, Appl. Phys. Lett. 84, 4810 (2004).
4. G. D. Chern, E. D. Readinger, H. Shen, M. Wraback, C. S. Gallinat, G. Koblmüller, and J. S. Speck, Appl. Phys. Lett. 89, 141115 (2006).
5. H. Ahn, Y. P. Ku, C. H. Chuang, C. L. Pan, H. W. Lin, Y. L. Hong, and S. Gwo, Appl. Phys. Lett. 92, 102103 (2008).
6. V. Cimalla, B. Pradarutti, G. Matthäus, C. Brückner, S. Riehemann, G. Notni, S. Nolte, A. Tünnermann, V. Lebedev, and O. Ambacher, Phys. Status Solidi B 244, 1829 (2007).
7. X. Mu, Y. J. Ding, K. Wang, D. Jena, and Y. B. Zotova, Opt. Lett. 32, 1423 (2007).
8. M. Nakajima, Y. Oda, and T. Suemoto, Appl. Phys. Lett. 85, 2694 (2004).
9. M. T. Hasan, A. G. Bhuiyan, and A. Yamamoto, Solid-State Electron. 52, 134 (2008).
10. K. J. Chang, J. Y. Chang, M. C. Chen, S. M. Lahn, C. J. Kao, Z. Y. Li, W. Y. Uen, and G. C. Chi, J. Vac. Sci. Technol. A 25, 701 (2007).
11. M. D. Yang, J. L. Shen, M. C. Chen, C. C. Chiang, S. M. Lan, T. N. Yang, M. H. Lo, H. C. Kuo, T. C. Lu, P. J. Huang, S. C. Hung, G. C. Chi, and W. C. Chou, J. Appl. Phys. 102, 113514 (2007).
12. S. B. Che, T. Mizuno, X. Wang, Y. Ishitani, and A. Yoshikawa, J. Appl. Phys. 102, 083539 (2007).
13. X. Wang, S. B. Che, Y. Ishitani, A. Yoshikawa, H. Sasaki, T. Shinagawa, and S. Yoshida, Appl. Phys. Lett. 91, 081912 (2007).
14. D. Muto, T. Araki, H. Naoi, F. Matsuda, and Y. Nanishi, Phys. Status Solidi A 202, 773 (2005).
15. J. S. Hwang, H. C. Lin, K. I. Lin, and X. C. Zhang, Appl. Phys. Lett. 87, 121107 (2005).
16. J. S. Hwang, H. C. Lin, Y. C. Huang, K. I. Lin, J. W. Chang, and T. F. Guo, Electrochem. Solid-State Lett. 11, H63 (2008).
17. K. Liu, J. Xu, T. Yuan, and X.-C. Zhang, Phys. Rev. B 73, 155330 (2006).
18. J. S. Hwang, H. C. Lin, C. K. Chang, T. S. Wang, L. S. Chang, J. I. Chyi, W. S. Liu, S. H. Chen, H. H. Lin, and P. W. Liu, Opt. Express 15, 5120 (2007).