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Volumn 80, Issue 2, 2002, Pages 258-260

Donor and acceptor concentrations in degenerate InN

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL DATA; DEFECT FORMATION ENERGIES; DEFECTS AND IMPURITIES; DONOR AND ACCEPTOR; FITTED VALUES; HALL EFFECT MEASUREMENT; INN LAYERS; THREADING DISLOCATION;

EID: 79955990967     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1432742     Document Type: Article
Times cited : (145)

References (16)
  • 1
    • 0032181962 scopus 로고    scopus 로고
    • For a recent review, see, jpd JPAPBE 0022-3727
    • For a recent review, see, O. Ambacher, J. Phys. D 31, 2653 (1998). jpd JPAPBE 0022-3727
    • (1998) J. Phys. D , vol.31 , pp. 2653
    • Ambacher, O.1
  • 14
    • 0042561618 scopus 로고    scopus 로고
    • edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel (INSPEC, London
    • M. Leroux and B. Gil, in GaN and Related Semiconductors, edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel (INSPEC, London, 1999), p. 117.
    • (1999) GaN and Related Semiconductors , pp. 117
    • Leroux, M.1    Gil, B.2
  • 15
    • 45749155829 scopus 로고    scopus 로고
    • edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel (INSPEC, London
    • T. M. Tansley and E. M. Goldys, in GaN and Related Semiconductors, edited by J. H. Edgar, S. Strite, I. Akasaki, H. Amano, and C. Wetzel (INSPEC, London, 1999), p. 123.
    • (1999) GaN and Related Semiconductors , pp. 123
    • Tansley, T.M.1    Goldys, E.M.2
  • 16
    • 79957938841 scopus 로고    scopus 로고
    • Shiva Technologies, 6707 Brooklawn Parkway, Syracuse, NY 13211.
    • Shiva Technologies, 6707 Brooklawn Parkway, Syracuse, NY 13211.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.