Study of the pyrolysis of tertiarybutylhydrazine and GaN film growth

Journal of Crystal Growth

Volumn 189-190, Issue , 1998, Pages 325-329

  Nishide, Shuichi ^a   Yoshimura, Takashi ^a   Takamatsu, Yukichi ^b   Ichige, Atsushi ^a   Pak, Kangsa ^a   Ohshima, Naoki ^a   Yonezu, Hiroo ^a  

^a TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^b Japan Pionics Co Ltd   (Japan)

Author keywords

GaN; MOVPE; Pyrolysis; Sapphire substrate; Tertiarybutylhydrazine

Indexed keywords

DECOMPOSITION; FILM GROWTH; HIGH TEMPERATURE EFFECTS; MASS SPECTROMETERS; METALLORGANIC VAPOR PHASE EPITAXY; MORPHOLOGY; NITRIDES; PYROLYSIS; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SURFACE PROPERTIES;

TERTIARYBUTYLHYDRAZINE;

SEMICONDUCTING FILMS;

EID: 0032093836     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(98)00279-6     Document Type: Article

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