MOVPE growth of InN buffer layers on sapphire

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2787-2790

  Briot, O ^a   Ruffenach, S ^a   Moret, M ^a   Gil, B ^a   Giesen, Ch ^b   Heuken, M ^b   Rushworth, S ^c   Leese, T ^c   Succi, M ^d  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b AIXTRON AG   (Germany)

^c SAFC Hitech   (United Kingdom)

^d SAES GETTERS S P A   (Italy)

Author keywords

A1. Buffer layer; A3. MOCVD; B1. InN

Indexed keywords

A1. BUFFER LAYER; A3. MOCVD; AFM; B1. INN; CRYSTALLINE QUALITY; GAN BUFFER LAYERS; HIGH-CRYSTALLINE QUALITY; IN-PLANE; INN FILMS; MOCVD GROWTH; MOSAICITY; MOVPE GROWTH; SAPPHIRE NITRIDATION; SAPPHIRE SUBSTRATES; SAPPHIRE SURFACE;

BUFFER LAYERS; CHEMICAL VAPOR DEPOSITION; CORUNDUM; CRYSTALLINE MATERIALS; DROP FORMATION; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; INDIUM; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SAPPHIRE; SEMICONDUCTING GALLIUM;

OPTICAL WAVEGUIDES;

EID: 65949086037     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.008     Document Type: Article

References (22)

1. Trybus E., Namkoong G., Henderson W., Burnham S., Doolittle W.A., Cheung M., and Cartwright A. J. Crystal Growth 288 (2006) 218
2. Ahn H., Ku Y.-P., Chuang C.-H., Pan C.-L., Lin H.-W., Hong Y.-L., and Gwo S. Appl. Phys. Lett 92 (2008) 102103
3. Arnaudov B., Paskova T., Paskov P.P., Magnusson B., Valcheva E., Monemar B., Lu H., and Schaff W.J. Phys. Rev. B. 69 (2004) 115216
4. Amano H., Sawaki N., Akasaki I., and Toyoda T. Appl. Phys. Lett. 48 (1986) 353
5. Wang X., Che S.-B., Ishitani Y., and Yoshikawa A. Appl. Phys. Lett. 92 (2008) 132108
6. Lu C.J., Bendersky L.A., Lu H., and Schaff W.J. Appl. Phys. Lett. 83 (2003) 2817
7. Lu H., Schaff W.J., Hwang J., Wu H., Koley G., and Eastman L.F. Appl. Phys. Lett. 79 (2001) 1489
8. Maleyre B., Ruffenach S., Briot O., Gil B., and Van der Lee A. Superlattices Microstruct. 36 (2004) 517
9. Wang L.L., Wang H., Chen J., Sun X., Zhu J.J., Jiang D.S., Yang H., and Liang J.W. Superlattices Microstruct. 43 (2008) 81
10. Delimitis A., Gladkov P., Komninou Ph., Kehagias Th., Arvanitidis J., Ves S., Katsikini M., Dimakis E., and Georgakilas A. Phys. Stat. Sol. (a) 203 (2006) 162
11. Bhuiyan A.G., Yamamoto A., and Hashimoto A. Phys. Stat. Sol. (b) 228 (2001) 27
12. Yodo T., Ando H., Nosei D., and Harada Y. Phys. Stat. Sol. (b) 228 (2001) 21
13. Losurdo M., Giangregorio M.M., Bruno G., Kim T.-H., Wu P., Choi S., Brown A., Masia F., Capizzi M., and Polimeni A. Appl. Phys. Lett. 90 (2007) 11910
14. Zhu X.L., Guo L.W., Yu N.S., Yan J.F., Peng M.Z., Zhang J., Jia H.Q., Chen H., and Zhou J.M. J. Crystal Growth 306 (2007) 292
15. Yamaguchi T., Kurouchi M., Naoi H., Suzukic A., Arakia T., and Nanishi Y. J. Crystal Growth 275 (2005) e1321
16. Saito Y., Yamaguchi T., Kanazawa H., Kano K., Araki T., Nanishi Y., Teraguchi N., and Suzuki A. J. Crystal Growth 237-239 (2002) 1017
17. Mamutin V.V., Vekshin V.A., Davydov V.Yu., Ratnikov V.V., Shubina T.V., Ivanov S.V., Kopev P.S., Karlsteen M., Söderwall U., and Willander M. Phys. Stat. Sol. (a) 176 (1999) 247
18. Nanishi Y., Saito Y., and Yamaguchi T. Jpn. J. Appl. Phys 42 (2003) 2549
19. Rouvière J.L., Arlery M., Niebuhr R., Bachem K.H., and Briot O. Mat. Sci. Eng. B 43 (1997) 161
20. Ruffenach S., Briot O., Moret M., and Gil B. Appl. Phys. Lett. 90 (2007) 153102
21. Bi Z. J. Crystal Growth 300 (2007) 123
22. Pozina G., Bergman J.P., Monemar B., Yamaguchi S., Amano H., and Akasaki I. Appl. Phys. Lett. 76 (2000) 3388