Microstructure of InN epilayers deposited in a close-coupled showerhead reactor

Journal of Crystal Growth

Volumn 310, Issue 23, 2008, Pages 4942-4946

  Ganguli, Tapas ^a   Kadir, Abdul ^b   Gokhale, Mahesh ^b   Kumar, Ravi ^a   Shah, A P ^b   Arora, B M ^b   Bhattacharya, Arnab ^b  

^a RAJA RAMANNA CENTRE FOR ADVANCED TECHNOLOGY   (India)

^b TATA INSTITUTE OF FUNDAMENTAL RESEARCH   (India)

Author keywords

A1. Defects; A1. High resolution X ray diffraction; A1. Metalorganic vapor phase epitaxy; B1. Nitrides

Indexed keywords

CRYSTAL GROWTH; DEPOSITION; DIFFRACTION; EPILAYERS; EPITAXIAL GROWTH; EPITAXIAL LAYERS; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; NITRIDES; SINGLE CRYSTALS; X RAY ANALYSIS; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

A1. DEFECTS; A1. HIGH-RESOLUTION X-RAY DIFFRACTION; A1. METALORGANIC VAPOR-PHASE EPITAXY; B1. NITRIDES; COHERENCE LENGTHS; CRITICAL VALUES; DEPOSITION PARAMETERS; DIFFERENT V/III RATIOS; EDGE DISLOCATIONS; HIGH RESOLUTIONS; INN LAYERS; MICROSTRAIN; MOSAIC BLOCKS; PRE-REQUISITES; REACTOR PRESSURES; SCREW DISLOCATIONS; V/III RATIOS; X-RAY DIFFRACTIONS;

COUPLED CIRCUITS;

EID: 56249141432     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2008.08.007     Document Type: Article

References (12)

1. Bhuiyan A.G., Hashimoto A., and Yamamoto A. J. Appl. Phys. 94 (2003) 2779
2. Wu J., Walukiewicz W., Li S.X., Armitage R., Ho J.C., Weber E.R., Haller E.E., Lu Hai., Schaff W.J., Barcz A., and Jakiela R. Appl. Phys. Lett. 84 (2004) 2805
3. Yamaguchi S., Kariya M., Nitta S., Takeuchi T., Wetzel C., Amano H., and Akasaki I. J. Appl. Phys. 85 (1999) 7682
4. Maleyre B., Briot O., and Ruffenach S. J. Crystal Growth 269 (2004) 15
5. Kadir A., Ganguli T., Gokhale M.R., Shah A.P., Chandvankar S.S., Arora B.M., and Bhattacharya A. J. Crystal Growth 298 (2007) 403
6. Suihkonen S., Sormunen J., Rangel-Kuoppa V.T., Koskenvaara H., and Sopanen M. J. Crystal Growth 291 (2006) 8
7. Liu B., Zhang R., Xie Z.L., Lu H., Liu Q.J., Zhang Z., Li Y., Xiu X.Q., Chen P., Han P., Gu S.L., Shi Y., Zheng Y.D., and Schaff W.J. J. Appl. Phys. 103 (2008) 023504
8. Srikant V., Speck J.S., and Clarke D.R. J. Appl. Phys. 82 (1997) 4286
9. Lu C.J., Bendersky L.A., Lu H., and Schaff W.J. Appl. Phys. Lett. 83 (2003) 2817
10. Chierchia R., Bottcher T., Heinke H., Einfeldt S., Figge S., and Hommel D. J. Appl. Phys. 93 (2003) 8918
11. Gay P., Hirsch P.B., and Kelly A. Acta Metall. 1 (1953) 315
12. Huang Y., Wang H., Sun Q., Chen J., Li D.Y., Zhang J.C., Wang Y.T., and Yang H. J. Crystal Growth 293 (2006) 269