Structural characterization of InN films grown on different buffer layers by metalorganic chemical vapor deposition

Journal of Crystal Growth

Volumn 306, Issue 2, 2007, Pages 292-296

  Zhu, X L ^a   Guo, L W ^a   Yu, N S ^a   Yan, J F ^a   Peng, M Z ^a   Zhang, J ^a   Jia, H Q ^a   Chen, H ^a   Zhou, J M ^a  

^a INSTITUTE OF PHYSICS   (China)

Author keywords

A1. Atomic force microscopy; A1. X ray diffraction; A3. Metalorganic chemical vapor deposition; B1. InN

Indexed keywords

ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; INDIUM COMPOUNDS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; X RAY DIFFRACTION;

IN-PLANE ORIENTATION; NITRIDED TREATMENT; ROOT-MEAN-SQUARE (RMS);

FILM GROWTH;

EID: 34547680291     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.05.052     Document Type: Article

References (27)

1. Davydov V.Yu., Klochikhin A.A., Seisyan R.P., Emtsev V.V., Ivanov S.V., Bechstedt F., Furthmüller J., Harima H., Mudryi A.V., Aderhold J., Semchinova O., and Graul J. Phys. Stat. Sol. (b) 229 (2002) R1
2. Wu J., Walukiewicz W., Yu K.M., Ager III J.W., Haller E.E., Lu H., Schaff W.J., Saito Y., and Nanishi Y. Appl. Phys. Lett. 80 (2002) 3967
3. Hamzaoui H., Bouazzi A.S., and Rezig B. Sol. Energy Mater. Sol. Cells 87 (2005) 595
4. Jones R.E., Yu K.M., Li S.X., Walukiewicz W., Ager J.W., Haller E.E., Lu H., and Schaff W.J. Phys. Rev. Lett. 96 (2006) 125505
5. Wu J., Walukiewicz W., Shan W., Yu K.M., Ager III J.W., Haller E.E., Lu H., and Schaff W.J. Phys. Rev. B 66 (2002) 201403
6. Fortz B.E., O'Leary S.K., Shur M.S., and Eastman L.F. J. Appl. Phys. 85 (1999) 7727
7. Okamoto N., Hoshinoa K., Haraa N., Takikawab M., and Arakawaa Y. J. Crystal Growth 272 (2004) 278
8. Juza R., and Hahn H. Z. Anorg. Allg. Chem. 239 (1938) 282
9. Yamamoto A., Tanaka T., Koide K., and Hashimoto A. Phys. Stat. Sol. (a) 194 (2002) 510
10. Wu J., Walukiewicz W., Shan W., Yu K.M., Ager III J.W., Haller E.E., Lu H., and Schaff W.J. Phys. Rev. B 66 (2002) 201403
11. Huang Y., Wang H., Sun Q., Chen J., Li D.Y., Wang Y.T., and Yang H. J. Crystal Growth 276 (2005) 13
12. Lu H., Schaff W.J., Hwang J., Wu H., Koley G., and Eastman L.F. Appl. Phys. Lett. 79 (2001) 1489
13. Yamamoto A., Imai N., Sugita K., and Hashimoto A. J. Crystal Growth 261 (2004) 271
14. Kadira A., Gangulib T., Gokhalea M.R., Shaha A.P., Chandvankara S.S., Aroraa B.M., and Bhattacharya A. J. Crystal Growth 298 (2007) 403
15. Qhalid Fareed R.S., Jain R., Gaska R., Shur J. Wu M.S., Walukiewicz W., and Asif Khan M. Appl. Phys. Lett. 84 (2004) 1892
16. Maleyre B., Briot O., and Ruffenach S. J. Crystal Growth 269 (2004) 15
17. Lei T., Ludwig K.F., and Moustakas J.T.D. J. Appl. Phys. 74 (1993) 4430
18. Yamaguchi S., Kariya M., Nitta S., Takeuchi T., Wetzel C., Amano H., and Akasaki I. J. Appl. Phys. 85 (1999) 7682
19. Wua M.F., Zhou S.Q., Vantomme A., Huang Y., Wang H., and Yang H. J. Vac. Sci. Technol. A 24 (2006) 275
20. Nanishi Y., Saito Y., Yamaguchi T., Hori M., Matsuda F., Araki T., Suzuki A., and Miyajima T. Phys. Stat. Sol. A 200 (2003) 202
21. Chierchia R., Wttcher T.B., Heinke H., Einfeldt S., Figge S., and Hommel D. J. Appl. Phys. 93 (2003) 8918
22. Ju J.W., Lee J.I., and Lee I.H. Thin Solid Films 515 (2006) 2291
23. Xie Z.L., Zhang R., Liu B., Li L., Liu C.X., Xiu X.Q., Zhao H., Han P., Gu S.L., Shi Y., and Zheng Y.D. J. Crystal Growth 298 (2007) 409
24. Metzger T., HWppler R., Born E., Ambacher O., Stutzmann M., StWmmer R., Schuster M., GWbel H., Christiansen S., Albrecht M., and Strunk H.P. Philos. Mag. A 77 (1998) 1013
25. Wang H.M., Zhang J.P., Chen C.Q., Fareed Q., Yang J.W., and Asif Khan M. Appl. Phys. Lett. 81 (2002) 604
26. Wu X.H., Fini P., Tarsa E.J., Heying B., Keller S., Mishra U.K., DenBaars S.P., and Speck J.S. J. Crystal Growth 189-90 (1998) 231
27. Ng Y.F., Cao Y.G., Xie M.H., Wang X.L., and Tong S.Y. Appl. Phys. Lett. 81 (2002) 3960