MOVPE growth of InN films using 1,1-dimethylhydrazine as a nitrogen precursor

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2802-2805

  Thieu, Quang Tu ^a   Seki, Yuki ^a   Kuboya, Shigeyuki ^a   Katayama, Ryuji ^a   Onabe, Kentaro ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Dimethylhydrazine; B1. Indium nitride; B1. Nitrides

Indexed keywords

A3. METALORGANIC VAPOR PHASE EPITAXY; B1. DIMETHYLHYDRAZINE; B1. INDIUM NITRIDE; B1. NITRIDES; DIMETHYLHYDRAZINE; EPITAXIAL RELATIONSHIPS; GROWTH FEATURE; INN FILMS; LOW TEMPERATURES; MOVPE; MOVPE GROWTH; PARASITIC REACTION; REACTOR PRESSURES; ROOM TEMPERATURE; SAPPHIRE SUBSTRATES; SINGLE DOMAINS; TRIMETHYLINDIUM; V/III RATIO;

CORUNDUM; CRYSTAL GROWTH; EPITAXIAL FILMS; INDIUM; NITRIDES; SAPPHIRE; SUBSTRATES; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 65749109538     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.011     Document Type: Article

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