Metalorganic vapor phase epitaxy of GaN, InN, and AlGaN using 1,1-dimethylhydrazine as a nitrogen source

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 46, Issue 10 A, 2007, Pages 6767-6772

  Funato, Mitsuru ^a   Ujita, Shinji ^a   Kawakami, Yoichi ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

1,1 Dimethylhydrazine; AlGaN; GaN; InN; MOVPE

Indexed keywords

AMMONIA; ATMOSPHERIC PRESSURE; CARBON; GROWTH TEMPERATURE; HYDROGEN; METALLORGANIC VAPOR PHASE EPITAXY; NITROGEN;

EDGE DISLOCATION DENSITY; NITROGEN SOURCES; SCREW DISLOCATION DENSITY; SOURCE PRECURSORS;

GALLIUM COMPOUNDS;

EID: 35348910087     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.46.6767     Document Type: Article

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