A porous layer: An evidence for the deterioration of MOVPE InN grown at high temperature (∼650 °C)

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Sugita, K ^a   Hashimoto, A ^a   Yamamoto, A ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC HYDROGEN; CRYSTAL QUALITIES; HIGH TEMPERATURE; HIGH-ELECTRON-DENSITY; INN FILMS; MOVPE; POROUS LAYERS; RATE-LIMITING PROCESS;

FILM GROWTH; HYDROGEN;

DETERIORATION;

EID: 70350128319     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880941     Document Type: Article

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