Hydrostatic pressure dependence of the fundamental bandgap of InN and In-rich group III nitride alloys

Applied Physics Letters

Volumn 83, Issue 24, 2003, Pages 4963-4965

  Li, S X ^a,b   Wu, J ^a,b   Haller, E E ^a,b   Walukiewicz, W ^a   Shan, W ^a   Lu, Hai ^c   Schaff, William J ^c  

^a LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

^b Lawrence Berkeley National Laboratory   (United States)

^c Cornell University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION EFFECTS; ELECTRON ENERGY LEVELS; ENERGY GAP; HYDROSTATIC PRESSURE; LIGHT ABSORPTION; LIGHT EMISSION; MOLECULAR BEAM EPITAXY; NUMERICAL ANALYSIS; PHOTOLUMINESCENCE; PLASTIC DEFORMATION; PRESSURE EFFECTS; X RAY DIFFRACTION ANALYSIS;

DIAMOND ANVIL CELLS; INDIUM ALUMINUM NITRIDE; INDIUM NITRIDE;

INDIUM ALLOYS;

EID: 0347763804     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1633681     Document Type: Article

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