Reactive ion etching of indium nitride using CH4 and H2 gases

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 39, Issue 9 A, 2000, Pages 5048-5051

  Gou, Qixin ^a   Matsuse, Motoatsu ^a   Nishio, Mitsuhiro ^a   Ogawa, Hiroshi ^a  

^a SAGA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL MICROSTRUCTURE; EPITAXIAL GROWTH; HYDROGEN; METHANE; MORPHOLOGY; NITRIDES; REACTIVE ION ETCHING; SUBSTRATES; SURFACES; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

ETCHING RATE; INDIUM NITRIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0342521598     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.5048     Document Type: Article

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