Growth temperature dependences of InN films grown by MOCVD

Applied Surface Science

Volumn 255, Issue 5 PART 2, 2008, Pages 3149-3152

  Yang, Cuibai ^a   Wang, Xiaoliang ^a   Xiao, Hongling ^a   Zhang, Xiaobin ^a   Hu, Guoxin ^a   Ran, Junxue ^a   Wang, Cuimei ^a   Li, Jianping ^a   Li, Jinmin ^a   Wang, Zhanguo ^a  

^a INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

InN; Mobility; MOCVD

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; GROWTH TEMPERATURE; HALL MOBILITY; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SURFACE MORPHOLOGY; TEMPERATURE DISTRIBUTION;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); CRYSTALLINE QUALITY; GROWTH-TEMPERATURE DEPENDENCE; INN FILMS; INN LAYERS;

INDIUM COMPOUNDS;

EID: 56949089596     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.09.013     Document Type: Article

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