Ammonia: A source of hydrogen dopant for InN layers grown by metal organic vapor phase epitaxy

Applied Physics Letters

Volumn 95, Issue 4, 2009, Pages

  Ruffenach, S ^a   Moret, M ^a   Briot, O ^a   Gil, B ^a  

^a UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AMMONIA ATMOSPHERE; ELECTRICAL PROPERTY; HYDROGEN DOPANT; HYDROGEN INCORPORATION; INDUSTRIAL PRODUCTION; INN LAYERS; KEY ISSUES; METAL-ORGANIC VAPOR PHASE EPITAXY; MOVPE; NITROGEN ATMOSPHERES; OUT-DIFFUSION; THERMAL-ANNEALING;

AMMONIA; CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC PROPERTIES; HYDROGEN; MOLECULAR BEAMS; MOLECULAR DYNAMICS; ORGANOMETALLICS; VAPORS;

METALLORGANIC VAPOR PHASE EPITAXY;

EID: 68249131700     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3189212     Document Type: Article

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