A comparative study on MOVPE InN films grown on 3c-SiC/Si(111) and sapphire

Physica Status Solidi (A) Applications and Materials Science

Volumn 203, Issue 1, 2006, Pages 127-130

  Kobayashi, T ^a   Cho, M S ^a   Sawazaki, N ^a   Hashimoto, A ^a   Yamamoto, A ^a   Ito, Y ^b  

^a UNIVERSITY OF FUKUI   (Japan)

^b WAKASA WAN ENERGY RESEARCH CENTER   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

HALL MOBILITY; PEAK ENERGY; ROOM TEMPERATURE; TEMPLATES;

CHEMICAL BONDS; HALL EFFECT; ION IMPLANTATION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; SAPPHIRE; SILICON CARBIDE;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 31144449185     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.200563513     Document Type: Conference Paper

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