Investigation of polarity dependent InN{0001} decomposition in N2 and H2 ambient

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 6, Issue SUPPL. 2, 2009, Pages

  Togashi, R ^a   Kamoshita, T ^a   Adachi, H ^a   Murakami, H ^a   Kumagai, Y ^a   Koukitu, A ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALN; DECOMPOSITION RATE; DECOMPOSITION REACTION; FREESTANDING GAN SUBSTRATES; HYDRIDE VAPOR PHASE EPITAXY; INN LAYERS; LOW TEMPERATURES; POLARITY DEPENDENCE;

ACTIVATION ENERGY; ARRHENIUS PLOTS; GALLIUM NITRIDE; INDIUM;

GALLIUM ALLOYS;

EID: 74549174090     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200880894     Document Type: Article

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