Origins of n-type residual carriers in RF-MOMBE grown InN layers

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2453-2456

  Iwao, Kosuke ^a   Yamamoto, Akio ^a   Hashimoto, Akihiro ^a  

^a UNIVERSITY OF FUKUI   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND GAPS; ELECTRON CONCENTRATIONS; INN LAYERS; LINEAR RELATIONS; LINEARLY DEPENDENT; NITRIDE SEMICONDUCTORS; NITROGEN VACANCIES; OXYGEN ATOMS; OXYGEN CONCENTRATIONS; OXYGEN INCORPORATION; RESIDUAL CARRIER;

ATOMS; CIVIL AVIATION; CONCENTRATION (PROCESS); CRYSTALS; ELECTRIC CONDUCTIVITY; METALS; MOLECULAR BEAM EPITAXY; NITRIDES; NITROGEN; NONMETALS; OXYGEN; SEMICONDUCTOR MATERIALS;

OXYGEN VACANCIES;

EID: 49749141098     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674887     Document Type: Conference Paper

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